中国物理B ›› 2022, Vol. 31 ›› Issue (6): 68505-068505.doi: 10.1088/1674-1056/ac4903

• • 上一篇    下一篇

Spin transport in epitaxial Fe3O4/GaAs lateral structured devices

Zhaocong Huang(黄兆聪)1,2, Wenqing Liu(刘文卿)3,4, Jian Liang(梁健)1, Qingjie Guo(郭庆杰)1, Ya Zhai(翟亚)1,†, and Yongbing Xu(徐永兵)2,3,‡   

  1. 1 School of Physics, Southeast University, Nanjing 211189, China;
    2 Spintronics and Nanodevice Laboratory, Department of Electronics, University of York, York YO105 DD, United Kingdom;
    3 York-Nanjing Joint Center in Spintronics, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China;
    4 Department of Electronic Engineering, Royal Holloway University of London, Egham, Surrey TW200 EX, United Kingdom
  • 收稿日期:2021-11-08 修回日期:2022-01-04 接受日期:2022-01-05 出版日期:2022-05-17 发布日期:2022-05-17
  • 通讯作者: Ya Zhai, Yongbing Xu E-mail:yazhai@seu.edu.cn;ybxu@nju.edu.cn
  • 基金资助:
    Project supported by the National Key Research and Development Program of China (Grant No. 2017YFA0204800), and the National Natural Science Foundation of China (Grant Nos. 52071079 and 11504047).

Spin transport in epitaxial Fe3O4/GaAs lateral structured devices

Zhaocong Huang(黄兆聪)1,2, Wenqing Liu(刘文卿)3,4, Jian Liang(梁健)1, Qingjie Guo(郭庆杰)1, Ya Zhai(翟亚)1,†, and Yongbing Xu(徐永兵)2,3,‡   

  1. 1 School of Physics, Southeast University, Nanjing 211189, China;
    2 Spintronics and Nanodevice Laboratory, Department of Electronics, University of York, York YO105 DD, United Kingdom;
    3 York-Nanjing Joint Center in Spintronics, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China;
    4 Department of Electronic Engineering, Royal Holloway University of London, Egham, Surrey TW200 EX, United Kingdom
  • Received:2021-11-08 Revised:2022-01-04 Accepted:2022-01-05 Online:2022-05-17 Published:2022-05-17
  • Contact: Ya Zhai, Yongbing Xu E-mail:yazhai@seu.edu.cn;ybxu@nju.edu.cn
  • Supported by:
    Project supported by the National Key Research and Development Program of China (Grant No. 2017YFA0204800), and the National Natural Science Foundation of China (Grant Nos. 52071079 and 11504047).

RichHTML

0

PDF (PC)

182

赞

摘要： Research in the spintronics community has been intensively stimulated by the proposal of the spin field-effect transistor (SFET), which has the potential for combining the data storage and process in a single device. Here we report the spin dependent transport on a Fe3O4/GaAs based lateral structured device. Parallel and antiparallel states of two Fe3O4 electrodes are achieved. A clear MR loop shows the perfect butterfly shape at room temperature, of which the intensity decreases with the reducing current, showing the strong bias dependence. Understanding the spin-dependent transport properties in this architecture has strong implication in further development of the spintronic devices for room-temperature SFETs.

关键词: spin field-effect transistor, spin injection and detection, half metal, magnetoresistance

Abstract: Research in the spintronics community has been intensively stimulated by the proposal of the spin field-effect transistor (SFET), which has the potential for combining the data storage and process in a single device. Here we report the spin dependent transport on a Fe3O4/GaAs based lateral structured device. Parallel and antiparallel states of two Fe3O4 electrodes are achieved. A clear MR loop shows the perfect butterfly shape at room temperature, of which the intensity decreases with the reducing current, showing the strong bias dependence. Understanding the spin-dependent transport properties in this architecture has strong implication in further development of the spintronic devices for room-temperature SFETs.

Key words: spin field-effect transistor, spin injection and detection, half metal, magnetoresistance

中图分类号:  (Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)

  • 85.75.-d
85.75.Hh (Spin polarized field effect transistors) 73.43.Qt (Magnetoresistance) 75.30.Gw (Magnetic anisotropy)