中国物理B ›› 2022, Vol. 31 ›› Issue (2): 27506-027506.doi: 10.1088/1674-1056/ac2b22

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Perpendicular magnetization and exchange bias in epitaxial NiO/[Ni/Pt]2 multilayers

Lin-Ao Huang(黄林傲)1, Mei-Yu Wang(王梅雨)2, Peng Wang(王鹏)2,5, Yuan Yuan(袁源)1, Ruo-Bai Liu(刘若柏)1, Tian-Yu Liu(刘天宇)1, Yu Lu(卢羽)1, Jia-Rui Chen(陈家瑞)1, Lu-Jun Wei(魏陆军)3, Wei Zhang(张维)1, Biao You(游彪)1,5, Qing-Yu Xu(徐庆宇)4,†, and Jun Du(杜军)1,5,‡   

  1. 1 National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China;
    2 College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, China;
    3 School of Science, Nanjing University of Posts and Telecommunications, Nanjing 210046, China;
    4 School of Physics, Southeast University, Nanjing 211189, China;
    5 Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
  • 收稿日期:2021-08-24 修回日期:2021-09-24 接受日期:2021-09-29 出版日期:2022-01-13 发布日期:2022-01-18
  • 通讯作者: Qing-Yu Xu, Jun Du E-mail:xuqingyu@seu.edu.cn;jdu@nju.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 51971109, 51771053, 52001169, and 11874199), the National Key Research and Development Program of China (Grant No. 2016YFA0300803), the Fundamental Research Funds for the Central University, China (Grant No. 2242020k30039), and the open research fund of Key Laboratory of MEMS of Ministry of Education, Southeast University.

Perpendicular magnetization and exchange bias in epitaxial NiO/[Ni/Pt]2 multilayers

Lin-Ao Huang(黄林傲)1, Mei-Yu Wang(王梅雨)2, Peng Wang(王鹏)2,5, Yuan Yuan(袁源)1, Ruo-Bai Liu(刘若柏)1, Tian-Yu Liu(刘天宇)1, Yu Lu(卢羽)1, Jia-Rui Chen(陈家瑞)1, Lu-Jun Wei(魏陆军)3, Wei Zhang(张维)1, Biao You(游彪)1,5, Qing-Yu Xu(徐庆宇)4,†, and Jun Du(杜军)1,5,‡   

  1. 1 National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China;
    2 College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, China;
    3 School of Science, Nanjing University of Posts and Telecommunications, Nanjing 210046, China;
    4 School of Physics, Southeast University, Nanjing 211189, China;
    5 Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
  • Received:2021-08-24 Revised:2021-09-24 Accepted:2021-09-29 Online:2022-01-13 Published:2022-01-18
  • Contact: Qing-Yu Xu, Jun Du E-mail:xuqingyu@seu.edu.cn;jdu@nju.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 51971109, 51771053, 52001169, and 11874199), the National Key Research and Development Program of China (Grant No. 2016YFA0300803), the Fundamental Research Funds for the Central University, China (Grant No. 2242020k30039), and the open research fund of Key Laboratory of MEMS of Ministry of Education, Southeast University.

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摘要： The realization of perpendicular magnetization and perpendicular exchange bias (PEB) in magnetic multilayers is important for the spintronic applications. NiO(t)/[Ni(4 nm)/Pt(1 nm)]2 multilayers with varying the NiO layer thickness t have been epitaxially deposited on SrTiO3 (001) substrates. Perpendicular magnetization can be achieved when t < 25 nm. Perpendicular magnetization originates from strong perpendicular magnetic anisotropy (PMA), mainly resulting from interfacial strain induced by the lattice mismatch between the Ni and Pt layers. The PMA energy constant decreases monotonically with increasing t, due to the weakening of Ni (001) orientation and a little degradation of the Ni-Pt interface. Furthermore, significant PEB can be observed though NiO layer has spin compensated (001) crystalline plane. The PEB field increases monotonically with increasing t, which is considered to result from the thickness dependent anisotropy of the NiO layer.

关键词: perpendicular magnetic anisotropy, perpendicular exchange bias, epitaxial growth, random field model

Abstract: The realization of perpendicular magnetization and perpendicular exchange bias (PEB) in magnetic multilayers is important for the spintronic applications. NiO(t)/[Ni(4 nm)/Pt(1 nm)]2 multilayers with varying the NiO layer thickness t have been epitaxially deposited on SrTiO3 (001) substrates. Perpendicular magnetization can be achieved when t < 25 nm. Perpendicular magnetization originates from strong perpendicular magnetic anisotropy (PMA), mainly resulting from interfacial strain induced by the lattice mismatch between the Ni and Pt layers. The PMA energy constant decreases monotonically with increasing t, due to the weakening of Ni (001) orientation and a little degradation of the Ni-Pt interface. Furthermore, significant PEB can be observed though NiO layer has spin compensated (001) crystalline plane. The PEB field increases monotonically with increasing t, which is considered to result from the thickness dependent anisotropy of the NiO layer.

Key words: perpendicular magnetic anisotropy, perpendicular exchange bias, epitaxial growth, random field model

中图分类号:  (Magnetic anisotropy)

  • 75.30.Gw
75.70.-i (Magnetic properties of thin films, surfaces, and interfaces) 75.30.Et (Exchange and superexchange interactions)