中国物理B ›› 2021, Vol. 30 ›› Issue (11): 118104-118104.doi: 10.1088/1674-1056/ac248d

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Suppression of ion migration in perovskite materials by pulse-voltage method

Xue-Yan Wang(王雪岩)1,2,3,†, Hu Wang(王虎)2,3,5,†, Luo-Ran Chen(陈烙然)2,3,5, Yu-Chuan Shao(邵宇川)2,3,4,5,‡, and Jian-Da Shao(邵建达)1,2,3,4,5,§   

  1. 1 School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China;
    2 Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China;
    3 Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China;
    4 Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China;
    5 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • 收稿日期:2021-07-30 修回日期:2021-09-03 接受日期:2021-09-08 出版日期:2021-10-13 发布日期:2021-10-27
  • 通讯作者: Yu-Chuan Shao, Jian-Da Shao E-mail:shaoyuchuan@siom.ac.cn;jdshao@siom.ac.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 61805263) and Shanghai Sailing Program, China (Grant No. 18YF1426400).

Suppression of ion migration in perovskite materials by pulse-voltage method

Xue-Yan Wang(王雪岩)1,2,3,†, Hu Wang(王虎)2,3,5,†, Luo-Ran Chen(陈烙然)2,3,5, Yu-Chuan Shao(邵宇川)2,3,4,5,‡, and Jian-Da Shao(邵建达)1,2,3,4,5,§   

  1. 1 School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China;
    2 Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China;
    3 Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China;
    4 Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China;
    5 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • Received:2021-07-30 Revised:2021-09-03 Accepted:2021-09-08 Online:2021-10-13 Published:2021-10-27
  • Contact: Yu-Chuan Shao, Jian-Da Shao E-mail:shaoyuchuan@siom.ac.cn;jdshao@siom.ac.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 61805263) and Shanghai Sailing Program, China (Grant No. 18YF1426400).

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摘要： Hybrid halide perovskites have great potential for applications in optoelectronic devices. However, the typical ion migration in perovskite could lead to the non-repeatability of electrical measurement, instability of material, and degradation of device performance. The basic current-voltage behavior of perovskite materials is intricate due to the mixed electronic-ionic characteristic, which is still poorly understood in these semiconductors. Developing novel measurement schematic is a promising solution to obtain the intrinsic electrical performance without the interference of ion migration. Herein, we explore the pulse-voltage (PV) method on methylammonium lead tribromide single crystals to protect the device from the ion migration. A guideline is summarized through the analysis of measurement history and condition parameters. The influence of the ion migration on current-voltage measurement, such as repeatability and hysteresis loop, is under controlled. An application of the PV method is demonstrated on the activation energy of conductivity. The abruption of activation energy still exists near the phase transition temperature despite the ion migration is excluded by the PV method, introducing new physical insight on the current-voltage behavior of perovskite materials. The guideline on PV method will be beneficial for measuring halide perovskite materials and developing optoelectronic applications with new technique schematic.

关键词: perovskites, ion migration, electrical properties, temperature-dependent resistivity

Abstract: Hybrid halide perovskites have great potential for applications in optoelectronic devices. However, the typical ion migration in perovskite could lead to the non-repeatability of electrical measurement, instability of material, and degradation of device performance. The basic current-voltage behavior of perovskite materials is intricate due to the mixed electronic-ionic characteristic, which is still poorly understood in these semiconductors. Developing novel measurement schematic is a promising solution to obtain the intrinsic electrical performance without the interference of ion migration. Herein, we explore the pulse-voltage (PV) method on methylammonium lead tribromide single crystals to protect the device from the ion migration. A guideline is summarized through the analysis of measurement history and condition parameters. The influence of the ion migration on current-voltage measurement, such as repeatability and hysteresis loop, is under controlled. An application of the PV method is demonstrated on the activation energy of conductivity. The abruption of activation energy still exists near the phase transition temperature despite the ion migration is excluded by the PV method, introducing new physical insight on the current-voltage behavior of perovskite materials. The guideline on PV method will be beneficial for measuring halide perovskite materials and developing optoelectronic applications with new technique schematic.

Key words: perovskites, ion migration, electrical properties, temperature-dependent resistivity

中图分类号:  (Methods of materials testing and analysis)

  • 81.70.-q
84.37.+q (Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.)) 81.05.Fb (Organic semiconductors)