Recent advances, perspectives, and challenges inferroelectric synapses

doi:10.1088/1674-1056/aba603

中国物理B ›› 2020, Vol. 29 ›› Issue (9): 97701-097701.doi: 10.1088/1674-1056/aba603

所属专题： SPECIAL TOPIC — Physics in neuromorphic devices

Recent advances, perspectives, and challenges inferroelectric synapses

Bo-Bo Tian(田博博), Ni Zhong(钟妮), Chun-Gang Duan(段纯刚)

1 Key Laboratory of Polar Materials and Devices(MOE), Department of Electronics, East China Normal University, Shanghai 200241, China;
2 Collaborative Innovation Center of Extreme Optics, Shanxi University, Shanxi 030006, China

收稿日期:2020-05-11 修回日期:2020-07-08 接受日期:2020-07-15 出版日期:2020-09-05 发布日期:2020-09-05
通讯作者: Bo-Bo Tian, Chun-Gang Duan E-mail:bbtian@ee.ecnu.edu.cn;cgduan@clpm.ecnu.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 61804055), "Chenguang Program" supported by Shanghai Education Development Foundation and Shanghai Municipal Education Commission, China (Grant No. 17CG24), and Shanghai Science and Technology Innovation Action Plan, China (Grant No. 19JC1416700).

Recent advances, perspectives, and challenges inferroelectric synapses

Bo-Bo Tian(田博博)¹, Ni Zhong(钟妮)¹, Chun-Gang Duan(段纯刚)^1,2

1 Key Laboratory of Polar Materials and Devices(MOE), Department of Electronics, East China Normal University, Shanghai 200241, China;
2 Collaborative Innovation Center of Extreme Optics, Shanxi University, Shanxi 030006, China

Received:2020-05-11 Revised:2020-07-08 Accepted:2020-07-15 Online:2020-09-05 Published:2020-09-05
Contact: Bo-Bo Tian, Chun-Gang Duan E-mail:bbtian@ee.ecnu.edu.cn;cgduan@clpm.ecnu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 61804055), "Chenguang Program" supported by Shanghai Education Development Foundation and Shanghai Municipal Education Commission, China (Grant No. 17CG24), and Shanghai Science and Technology Innovation Action Plan, China (Grant No. 19JC1416700).

摘要/Abstract

摘要： The multiple ferroelectric polarization tuned by external electric field could be used to simulate the biological synaptic weight. Ferroelectric synaptic devices have two advantages compared with other reported ones: One is that the intrinsic switching of ferroelectric domains without invoking of defect migration as in resistive oxides, contributes reliable performance in these ferroelectric synapses. Another tremendous advantage is the extremely low energy consumption because the ferroelectric polarization is manipulated by electric field which eliminates the Joule heating by current as in magnetic and phase change memories. Ferroelectric synapses have potential for the construction of low-energy and effective brain-like intelligent networks. Here we summarize recent pioneering work of ferroelectric synapses involving the structure of ferroelectric tunnel junctions (FTJs), ferroelectric diodes (FDs), and ferroelectric field effect transistors (FeFETs), respectively, and shed light on future work needed to accelerate their application for efficient neural network.

关键词: ferroelectric, synapse, ferroelectric tunnel junctions, ferroelectric field effect transistors

Abstract: The multiple ferroelectric polarization tuned by external electric field could be used to simulate the biological synaptic weight. Ferroelectric synaptic devices have two advantages compared with other reported ones: One is that the intrinsic switching of ferroelectric domains without invoking of defect migration as in resistive oxides, contributes reliable performance in these ferroelectric synapses. Another tremendous advantage is the extremely low energy consumption because the ferroelectric polarization is manipulated by electric field which eliminates the Joule heating by current as in magnetic and phase change memories. Ferroelectric synapses have potential for the construction of low-energy and effective brain-like intelligent networks. Here we summarize recent pioneering work of ferroelectric synapses involving the structure of ferroelectric tunnel junctions (FTJs), ferroelectric diodes (FDs), and ferroelectric field effect transistors (FeFETs), respectively, and shed light on future work needed to accelerate their application for efficient neural network.

Key words: ferroelectric, synapse, ferroelectric tunnel junctions, ferroelectric field effect transistors

中图分类号: (Polarization and depolarization)

77.22.Ej

77.80.Dj (Domain structure; hysteresis) 87.19.lg (Synapses: chemical and electrical (gap junctions)) 75.85.+t (Magnetoelectric effects, multiferroics)

田博博, 钟妮, 段纯刚. Recent advances, perspectives, and challenges inferroelectric synapses[J]. 中国物理B, 2020, 29(9): 97701-097701.

Bo-Bo Tian(田博博), Ni Zhong(钟妮), Chun-Gang Duan(段纯刚). Recent advances, perspectives, and challenges inferroelectric synapses[J]. Chin. Phys. B, 2020, 29(9): 97701-097701.

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Recent advances, perspectives, and challenges inferroelectric synapses

Recent advances, perspectives, and challenges inferroelectric synapses

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