中国物理B ›› 2020, Vol. 29 ›› Issue (9): 95203-095203.doi: 10.1088/1674-1056/ab9436

• • 上一篇    下一篇

Effect of radio frequency bias on plasma characteristics of inductively coupled argon discharge based on fluid simulations

Xiao-Yan Sun(孙晓艳), Yu-Ru Zhang(张钰如), Sen Chai(柴森), You-Nian Wang(王友年), Yan-Yan Chu(楚艳艳), Jian-Xin He(何建新)   

  1. 1 Textile and Garment Industry of Research Institute, Zhongyuan University of Technology, Zhengzhou 450007, China;
    2 Key Laboratory of Materials Modification by Laser, Ion, and Electron Beams(Ministry of Education), School of Physics, Dalian University of Technology, Dalian 116024, China;
    3 China Special Equipment Inspection and Research Institute, Beijing 100029, China
  • 收稿日期:2020-04-01 修回日期:2020-05-10 接受日期:2020-05-19 出版日期:2020-09-05 发布日期:2020-09-05
  • 通讯作者: Xiao-Yan Sun, Jian-Xin He E-mail:xysun@zut.edu.cn;hejianxin771117@163.com
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 11875101 and 11905307).

Effect of radio frequency bias on plasma characteristics of inductively coupled argon discharge based on fluid simulations

Xiao-Yan Sun(孙晓艳)1, Yu-Ru Zhang(张钰如)2, Sen Chai(柴森)3, You-Nian Wang(王友年)2, Yan-Yan Chu(楚艳艳)1, Jian-Xin He(何建新)1   

  1. 1 Textile and Garment Industry of Research Institute, Zhongyuan University of Technology, Zhengzhou 450007, China;
    2 Key Laboratory of Materials Modification by Laser, Ion, and Electron Beams(Ministry of Education), School of Physics, Dalian University of Technology, Dalian 116024, China;
    3 China Special Equipment Inspection and Research Institute, Beijing 100029, China
  • Received:2020-04-01 Revised:2020-05-10 Accepted:2020-05-19 Online:2020-09-05 Published:2020-09-05
  • Contact: Xiao-Yan Sun, Jian-Xin He E-mail:xysun@zut.edu.cn;hejianxin771117@163.com
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 11875101 and 11905307).

摘要: A fluid model is employed to investigate the effect of radio frequency bias on the behavior of an argon inductively coupled plasma (ICP). In particular, the effects of ICP source power, single-frequency bias power, and dual-frequency bias power on the characteristics of ICP are simulated at a fixed pressure of 30 mTorr (1 Torr=1.33322×102 Pa). When the bias frequency is fixed at 27.12 MHz, the two-dimensional (2D) plasma density profile is significantly affected by the bias power at low ICP source power (e.g., 50 W), whereas it is weakly affected by the bias power at higher ICP source power (e.g., 100 W). When dual-frequency (27.12 MHz/2.26 MHz) bias is applied and the sum of bias powers is fixed at 500 W, a pronounced increase in the maximum argon ion density is observed with the increase of the bias power ratio in the absence of ICP source power. As the ratio of 27.12-MHz/2.26-MHz bias power decreases from 500 W/0 W to 0 W/500 W with the ICP source power fixed at 50 W, the plasma density profiles smoothly shifts from edge-high to center-high, and the effect of bias power on the plasma distribution becomes weaker with the bias power ratio decreasing. Besides, the axial ion flux at the substrate surface is characterized by a maximum at the edge of the substrate. When the ICP source power is higher, the 2D plasma density profiles, as well as the spatiotemporal and radial distributions of ion flux at the substrate surface are characterized by a peak in the reactor center, and the distributions of plasma parameters are negligibly affected by the dual-frequency bias power ratio.

关键词: fluid simulation, single- and dual-frequency bias power, plasma distribution

Abstract: A fluid model is employed to investigate the effect of radio frequency bias on the behavior of an argon inductively coupled plasma (ICP). In particular, the effects of ICP source power, single-frequency bias power, and dual-frequency bias power on the characteristics of ICP are simulated at a fixed pressure of 30 mTorr (1 Torr=1.33322×102 Pa). When the bias frequency is fixed at 27.12 MHz, the two-dimensional (2D) plasma density profile is significantly affected by the bias power at low ICP source power (e.g., 50 W), whereas it is weakly affected by the bias power at higher ICP source power (e.g., 100 W). When dual-frequency (27.12 MHz/2.26 MHz) bias is applied and the sum of bias powers is fixed at 500 W, a pronounced increase in the maximum argon ion density is observed with the increase of the bias power ratio in the absence of ICP source power. As the ratio of 27.12-MHz/2.26-MHz bias power decreases from 500 W/0 W to 0 W/500 W with the ICP source power fixed at 50 W, the plasma density profiles smoothly shifts from edge-high to center-high, and the effect of bias power on the plasma distribution becomes weaker with the bias power ratio decreasing. Besides, the axial ion flux at the substrate surface is characterized by a maximum at the edge of the substrate. When the ICP source power is higher, the 2D plasma density profiles, as well as the spatiotemporal and radial distributions of ion flux at the substrate surface are characterized by a peak in the reactor center, and the distributions of plasma parameters are negligibly affected by the dual-frequency bias power ratio.

Key words: fluid simulation, single- and dual-frequency bias power, plasma distribution

中图分类号:  (Plasma simulation)

  • 52.65.-y
52.50.Qt (Plasma heating by radio-frequency fields; ICR, ICP, helicons) 52.30.Ex (Two-fluid and multi-fluid plasmas)