Microstructure evolution and passivation quality of hydrogenated amorphous silicon oxide (a-SiOx:H) on - and -orientated c-Si wafers

doi:10.1088/1674-1056/ab6c47

中国物理B ›› 2020, Vol. 29 ›› Issue (3): 38801-038801.doi: 10.1088/1674-1056/ab6c47

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Microstructure evolution and passivation quality of hydrogenated amorphous silicon oxide (a-SiO_x:H) on <100>- and <111>-orientated c-Si wafers

1 Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin 300350, China;
2 Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, Tianjin 300350, China;
3 Engineering Center of Thin Film Photoelectronic Technology of Ministry of Education, Tianjin 300350, China;
4 Sino-Euro Joint Research Center for Photovoltaic Power Generation of Tianjin, Tianjin 300350, China

收稿日期:2019-11-14 修回日期:2020-01-08 出版日期:2020-03-05 发布日期:2020-03-05
通讯作者: Guang-Cai Wang, Guo-Fu Hou E-mail:wgc2008@nankai.edu.cn;gfhou@nankai.edu.cn
基金资助:
Project supported by the National Key Research and Deveopment Program of China (Grant No. 2018YFB1500402), the National Natural Science Foundation of China (Grant Nos. 61674084 and 61874167), the Fundamental Research Funds for Central Universities, China, the Natural Science Foundation of Tianjin City, China (Grant No. 17JCYBJC41400), the Open Fund of the Key Laboratory of Optical Information Science & Technology of Ministry of Education of China (Grant No. 2017KFKT014), the 111 Project, China (Grant No. B16027), the International Cooperation Base, China (Grant No. 2016D01025), and Tianjin International Joint Research and Development Center, China.

Microstructure evolution and passivation quality of hydrogenated amorphous silicon oxide (a-SiO_x:H) on <100>- and <111>-orientated c-Si wafers

Jun-Fan Chen(陈俊帆)^1,2,3,4, Sheng-Sheng Zhao(赵生盛)^1,2,3,4, Ling-Ling Yan(延玲玲)^1,2,3,4, Hui-Zhi Ren(任慧志)^1,2,3,4, Can Han(韩灿)^1,2,3,4, De-Kun Zhang(张德坤)^1,2,3,4, Chang-Chun Wei(魏长春)^1,2,3,4, Guang-Cai Wang(王广才)^1,2,3,4, Guo-Fu Hou(侯国付)^1,2,3,4, Ying Zhao(赵颖)^1,2,3,4, Xiao-Dan Zhang(张晓丹)^1,2,3,4

1 Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin 300350, China;
2 Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, Tianjin 300350, China;
3 Engineering Center of Thin Film Photoelectronic Technology of Ministry of Education, Tianjin 300350, China;
4 Sino-Euro Joint Research Center for Photovoltaic Power Generation of Tianjin, Tianjin 300350, China

Received:2019-11-14 Revised:2020-01-08 Online:2020-03-05 Published:2020-03-05
Contact: Guang-Cai Wang, Guo-Fu Hou E-mail:wgc2008@nankai.edu.cn;gfhou@nankai.edu.cn
Supported by:
Project supported by the National Key Research and Deveopment Program of China (Grant No. 2018YFB1500402), the National Natural Science Foundation of China (Grant Nos. 61674084 and 61874167), the Fundamental Research Funds for Central Universities, China, the Natural Science Foundation of Tianjin City, China (Grant No. 17JCYBJC41400), the Open Fund of the Key Laboratory of Optical Information Science & Technology of Ministry of Education of China (Grant No. 2017KFKT014), the 111 Project, China (Grant No. B16027), the International Cooperation Base, China (Grant No. 2016D01025), and Tianjin International Joint Research and Development Center, China.

摘要/Abstract

摘要： Hydrogenated amorphous silicon oxide (a-SiO_x:H) is an attractive passivation material to suppress epitaxial growth and reduce the parasitic absorption loss in silicon heterojunction (SHJ) solar cells. In this paper, a-SiO_x:H layers on different orientated c-Si substrates are fabricated. An optimal effective lifetime (τ_eff) of 4743 μs and corresponding implied open-circuit voltage (iV_oc) of 724 mV are obtained on <100>-orientated c-Si wafers. While τ_eff of 2429 μs and iV_oc of 699 mV are achieved on <111>-orientated substrate. The FTIR and XPS results indicate that the a-SiO_x:H network consists of SiO_x (Si-rich), Si-OH, Si-O-SiH_x, SiO₂≡Si-Si, and O₃≡Si-Si. A passivation evolution mechanism is proposed to explain the different passivation results on different c-Si wafers. By modulating the a-SiO_x:H layer, the planar silicon heterojunction solar cell can achieve an efficiency of 18.15%.

关键词: a-SiO_x:H, orientated wafers, silicon heterojunction

Abstract: Hydrogenated amorphous silicon oxide (a-SiO_x:H) is an attractive passivation material to suppress epitaxial growth and reduce the parasitic absorption loss in silicon heterojunction (SHJ) solar cells. In this paper, a-SiO_x:H layers on different orientated c-Si substrates are fabricated. An optimal effective lifetime (τ_eff) of 4743 μs and corresponding implied open-circuit voltage (iV_oc) of 724 mV are obtained on <100>-orientated c-Si wafers. While τ_eff of 2429 μs and iV_oc of 699 mV are achieved on <111>-orientated substrate. The FTIR and XPS results indicate that the a-SiO_x:H network consists of SiO_x (Si-rich), Si-OH, Si-O-SiH_x, SiO₂≡Si-Si, and O₃≡Si-Si. A passivation evolution mechanism is proposed to explain the different passivation results on different c-Si wafers. By modulating the a-SiO_x:H layer, the planar silicon heterojunction solar cell can achieve an efficiency of 18.15%.

Key words: a-SiO_x:H, orientated wafers, silicon heterojunction

中图分类号: (Solar cells (photovoltaics))

88.40.H-

84.60.Jt (Photoelectric conversion) 88.40.jj (Silicon solar cells)

陈俊帆, 赵生盛, 延玲玲, 任慧志, 韩灿, 张德坤, 魏长春, 王广才, 侯国付, 赵颖, 张晓丹. Microstructure evolution and passivation quality of hydrogenated amorphous silicon oxide (a-SiO_x:H) on <100>- and <111>-orientated c-Si wafers[J]. 中国物理B, 2020, 29(3): 38801-038801.

Jun-Fan Chen(陈俊帆), Sheng-Sheng Zhao(赵生盛), Ling-Ling Yan(延玲玲), Hui-Zhi Ren(任慧志), Can Han(韩灿), De-Kun Zhang(张德坤), Chang-Chun Wei(魏长春), Guang-Cai Wang(王广才), Guo-Fu Hou(侯国付), Ying Zhao(赵颖), Xiao-Dan Zhang(张晓丹). Microstructure evolution and passivation quality of hydrogenated amorphous silicon oxide (a-SiO_x:H) on <100>- and <111>-orientated c-Si wafers[J]. Chin. Phys. B, 2020, 29(3): 38801-038801.

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Microstructure evolution and passivation quality of hydrogenated amorphous silicon oxide (a-SiO_x:H) on <100>- and <111>-orientated c-Si wafers

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Microstructure evolution and passivation quality of hydrogenated amorphous silicon oxide (a-SiOx:H) on <100>- and <111>-orientated c-Si wafers

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Microstructure evolution and passivation quality of hydrogenated amorphous silicon oxide (a-SiO_x:H) on <100>- and <111>-orientated c-Si wafers

Microstructure evolution and passivation quality of hydrogenated amorphous silicon oxide (a-SiO_x:H) on <100>- and <111>-orientated c-Si wafers