中国物理B ›› 2020, Vol. 29 ›› Issue (1): 18502-018502.doi: 10.1088/1674-1056/ab5d05
• SPECIAL TOPIC—Recent advances in thermoelectric materials and devices • 上一篇 下一篇
High-throughput fabrication and semi-automated characterization of oxide thin film transistors
Yanbing Han(韩炎兵), Sage Bauers, Qun Zhang(张群), Andriy Zakutayev
- 1 Materials Science Center, National Renewable Energy Laboratory, Golden CO 80401, USA;
2 Department of Materials Science, Fudan University, Shanghai 200433, China;
3 School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
High-throughput fabrication and semi-automated characterization of oxide thin film transistors
Yanbing Han(韩炎兵)1,2,3, Sage Bauers1, Qun Zhang(张群)2, Andriy Zakutayev1
- 1 Materials Science Center, National Renewable Energy Laboratory, Golden CO 80401, USA;
2 Department of Materials Science, Fudan University, Shanghai 200433, China;
3 School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
摘要： High throughput experimental methods are known to accelerate the rate of research, development, and deployment of electronic materials. For example, thin films with lateral gradients in composition, thickness, or other parameters have been used alongside spatially-resolved characterization to assess how various physical factors affect the material properties under varying measurement conditions. Similarly, multi-layer electronic devices that contain such graded thin films as one or more of their layers can also be characterized spatially in order to optimize the performance. In this work, we apply these high throughput experimental methods to thin film transistors (TFTs), demonstrating combinatorial channel layer growth, device fabrication, and semi-automated characterization using sputtered oxide TFTs as a case study. We show that both extrinsic and intrinsic types of device gradients can be generated in a TFT library, such as channel thickness and length, channel cation compositions, and oxygen atmosphere during deposition. We also present a semi-automated method to measure the 44 devices fabricated on a 50 mm×50 mm substrate that can help to identify properly functioning TFTs in the library and finish the measurement in a short time. Finally, we propose a fully automated characterization system for similar TFT libraries, which can be coupled with high throughput data analysis. These results demonstrate that high throughput methods can accelerate the investigation of TFTs and other electronic devices.
中图分类号: (Semiconductor-device characterization, design, and modeling)
- 85.30.De