Analysis of highly efficient perovskite solar cells with inorganic hole transport material

doi:10.1088/1674-1056/ab520f

摘要/Abstract

摘要： Organo-halide perovskites in planar heterojunction architecture have shown considerable promise as efficient light harvesters in solar cells. We carry out a numerical modeling of a planar lead based perovskite solar cell (PSC) with Cu₂ZnSnS₄ (CZTS) as the hole transporting material (HTM) using the one-dimensional solar cell capacitance simulator (SCAPS-1D). The effects of numerous parameters such as defect density, thickness, and doping density of the absorber layer on the device performance are investigated. The doping densities and electron affinities of the electron transporting material (ETM) and the HTM are also varied to optimize the PSC performance. It has been observed that a thinner absorber layer of~220 nm with a defect density of 10¹⁴ cm^-3 compared to the reference structure improves the device performance. When doping density of the absorber layer increases beyond 2×10¹⁶ cm^-3, the power conversion efficiency (PCE) reduces due to enhanced recombination rate. The defect density at the absorber/ETM interface reduces the PCE as well. Considering a series resistance of 5 Ω·cm² and all the optimum parameters of absorber, ETM and HTM layers simultaneously, the overall PCE of the device increases significantly. In comparison with the reference structure, the PCE of the optimized device has been increased from 12.76% to 22.7%, and hence the optimized CZTS based PSC is highly efficient.

关键词: CH₃NH₃PbI₃, Cu₂ZnSnS₄ (CZTS), SCAPS-1D, absorption coefficient

Abstract: Organo-halide perovskites in planar heterojunction architecture have shown considerable promise as efficient light harvesters in solar cells. We carry out a numerical modeling of a planar lead based perovskite solar cell (PSC) with Cu₂ZnSnS₄ (CZTS) as the hole transporting material (HTM) using the one-dimensional solar cell capacitance simulator (SCAPS-1D). The effects of numerous parameters such as defect density, thickness, and doping density of the absorber layer on the device performance are investigated. The doping densities and electron affinities of the electron transporting material (ETM) and the HTM are also varied to optimize the PSC performance. It has been observed that a thinner absorber layer of~220 nm with a defect density of 10¹⁴ cm^-3 compared to the reference structure improves the device performance. When doping density of the absorber layer increases beyond 2×10¹⁶ cm^-3, the power conversion efficiency (PCE) reduces due to enhanced recombination rate. The defect density at the absorber/ETM interface reduces the PCE as well. Considering a series resistance of 5 Ω·cm² and all the optimum parameters of absorber, ETM and HTM layers simultaneously, the overall PCE of the device increases significantly. In comparison with the reference structure, the PCE of the optimized device has been increased from 12.76% to 22.7%, and hence the optimized CZTS based PSC is highly efficient.

Key words: CH₃NH₃PbI₃, Cu₂ZnSnS₄ (CZTS), SCAPS-1D, absorption coefficient

中图分类号: (Solar cells (photovoltaics))

88.40.H-

88.40.hj (Efficiency and performance of solar cells) 88.40.fc (Modeling and analysis)

I Kabir, S A Mahmood. Analysis of highly efficient perovskite solar cells with inorganic hole transport material[J]. 中国物理B, 2019, 28(12): 128801-128801.

I Kabir, S A Mahmood. Analysis of highly efficient perovskite solar cells with inorganic hole transport material[J]. Chin. Phys. B, 2019, 28(12): 128801-128801.

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