Recent progress of infrared photodetectors based on lead chalcogenide colloidal quantum dots

doi:10.1088/1674-1056/28/2/020701

中国物理B ›› 2019, Vol. 28 ›› Issue (2): 20701-020701.doi: 10.1088/1674-1056/28/2/020701

所属专题： TOPICAL REVIEW — Photodetector: Materials, physics, and applications

• SPECIAL TOPIC—Recent advances in thermoelectric materials and devices • 上一篇下一篇

Recent progress of infrared photodetectors based on lead chalcogenide colloidal quantum dots

Jinming Hu(胡津铭), Yuansheng Shi(史源盛), Zhenheng Zhang(张珍衡), Ruonan Zhi(智若楠), Shengyi Yang(杨盛谊), Bingsuo Zou(邹炳锁)

1 Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China;
2 Key Laboratory of Advanced Optoelectronic Quantum Design and Measurement, Ministry of Education, Beijing Institute of Technology, Beijing 100081, China

收稿日期:2018-08-28 修回日期:2018-12-19 出版日期:2019-02-05 发布日期:2019-02-05
通讯作者: Shengyi Yang, Bingsuo Zou E-mail:syyang@bit.edu.cn;zoubs@bit.edu.cn
基金资助:
Project supported by the Fund from the State Key Laboratory of Transducer Technology, China (Grant No. SKT1404) and the Fund from the Key Laboratory of Photoelectronic Imaging Technology and System (Grant No. 2017OEIOF02) at Beijing Institute of Technology, Ministry of Education of China.

Recent progress of infrared photodetectors based on lead chalcogenide colloidal quantum dots

Jinming Hu(胡津铭)^1,2, Yuansheng Shi(史源盛)^1,2, Zhenheng Zhang(张珍衡)^1,2, Ruonan Zhi(智若楠)^1,2, Shengyi Yang(杨盛谊)^1,2, Bingsuo Zou(邹炳锁)^1,2

1 Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China;
2 Key Laboratory of Advanced Optoelectronic Quantum Design and Measurement, Ministry of Education, Beijing Institute of Technology, Beijing 100081, China

Received:2018-08-28 Revised:2018-12-19 Online:2019-02-05 Published:2019-02-05
Contact: Shengyi Yang, Bingsuo Zou E-mail:syyang@bit.edu.cn;zoubs@bit.edu.cn
Supported by:
Project supported by the Fund from the State Key Laboratory of Transducer Technology, China (Grant No. SKT1404) and the Fund from the Key Laboratory of Photoelectronic Imaging Technology and System (Grant No. 2017OEIOF02) at Beijing Institute of Technology, Ministry of Education of China.

摘要/Abstract

摘要： Commercial photodetectors based on silicon are extensively applied in numerous fields. Except for their high performance, their maximum absorption wavelength is not over than 1100 nm and incident light with longer wavelengths cannot be detected; in addition, their cost is high and their manufacturing process is complex. Therefore, it is meaningful and significant to extend absorption wavelength, to decrease cost, and to simplify the manufacturing process while maintaining high performance for photodetectors. Due to the properties of size-dependent bandgap tunability, low cost, facile processing, and substrate compatibility, solution-processed colloidal quantum dots (CQDs) have recently gained significant attention and become one of the most competitive and promising candidates for optoelectronic devices. Among these CQDs, lead chalcogenide CQDs are getting very prominent and are widely investigated. In this paper, the recent progress of infrared (IR) photodetectors based on lead sulfide (PbS), lead selenide (PbSe), and ternary PbS_xSe_1-x CQDs, and their underlying concepts, breakthroughs, and remaining challenges are reviewed, thus providing guidance for designing high-performance quantum-dot IR photodetectors.

关键词: colloidal quantum dots, lead chalcogenide, infrared photodetectors, nanocrystals

Abstract: Commercial photodetectors based on silicon are extensively applied in numerous fields. Except for their high performance, their maximum absorption wavelength is not over than 1100 nm and incident light with longer wavelengths cannot be detected; in addition, their cost is high and their manufacturing process is complex. Therefore, it is meaningful and significant to extend absorption wavelength, to decrease cost, and to simplify the manufacturing process while maintaining high performance for photodetectors. Due to the properties of size-dependent bandgap tunability, low cost, facile processing, and substrate compatibility, solution-processed colloidal quantum dots (CQDs) have recently gained significant attention and become one of the most competitive and promising candidates for optoelectronic devices. Among these CQDs, lead chalcogenide CQDs are getting very prominent and are widely investigated. In this paper, the recent progress of infrared (IR) photodetectors based on lead sulfide (PbS), lead selenide (PbSe), and ternary PbS_xSe_1-x CQDs, and their underlying concepts, breakthroughs, and remaining challenges are reviewed, thus providing guidance for designing high-performance quantum-dot IR photodetectors.

Key words: colloidal quantum dots, lead chalcogenide, infrared photodetectors, nanocrystals

中图分类号: (Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors)

07.57.Kp

85.35.Be (Quantum well devices (quantum dots, quantum wires, etc.)) 73.50.Pz (Photoconduction and photovoltaic effects) 85.60.Dw (Photodiodes; phototransistors; photoresistors)

胡津铭, 史源盛, 张珍衡, 智若楠, 杨盛谊, 邹炳锁. Recent progress of infrared photodetectors based on lead chalcogenide colloidal quantum dots[J]. 中国物理B, 2019, 28(2): 20701-020701.

Jinming Hu(胡津铭), Yuansheng Shi(史源盛), Zhenheng Zhang(张珍衡), Ruonan Zhi(智若楠), Shengyi Yang(杨盛谊), Bingsuo Zou(邹炳锁). Recent progress of infrared photodetectors based on lead chalcogenide colloidal quantum dots[J]. Chin. Phys. B, 2019, 28(2): 20701-020701.

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Recent progress of infrared photodetectors based on lead chalcogenide colloidal quantum dots

Recent progress of infrared photodetectors based on lead chalcogenide colloidal quantum dots

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