Influence of low-temperature sulfidation on the structure of ZnS thin films

doi:10.1088/1674-1056/28/2/024214

中国物理B ›› 2019, Vol. 28 ›› Issue (2): 24214-024214.doi: 10.1088/1674-1056/28/2/024214

• ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS • 上一篇下一篇

Influence of low-temperature sulfidation on the structure of ZnS thin films

Shuzhen Chen(陈书真), Ligang Song(宋力刚), Peng Zhang(张鹏), Xingzhong Cao(曹兴忠), Runsheng Yu(于润升), Baoyi Wang(王宝义), Long Wei(魏龙), Rengang Zhang(张仁刚)

1 Department of Applied Physics, Wuhan University of Science and Technology, Wuhan 430081, China;
2 Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China;
3 University of Chinese Academy of Sciences, Beijing 100049, China

收稿日期:2018-10-10 修回日期:2018-12-02 出版日期:2019-02-05 发布日期:2019-02-05
通讯作者: Peng Zhang, Rengang Zhang E-mail:zhangpeng@ihep.ac.cn;zhangrengang@wust.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11705212 and 11675188).

Influence of low-temperature sulfidation on the structure of ZnS thin films

Shuzhen Chen(陈书真)^1,2, Ligang Song(宋力刚)^2,3, Peng Zhang(张鹏)², Xingzhong Cao(曹兴忠)^2,3, Runsheng Yu(于润升)^2,3, Baoyi Wang(王宝义)^2,3, Long Wei(魏龙)^2,3, Rengang Zhang(张仁刚)¹

1 Department of Applied Physics, Wuhan University of Science and Technology, Wuhan 430081, China;
2 Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China;
3 University of Chinese Academy of Sciences, Beijing 100049, China

Received:2018-10-10 Revised:2018-12-02 Online:2019-02-05 Published:2019-02-05
Contact: Peng Zhang, Rengang Zhang E-mail:zhangpeng@ihep.ac.cn;zhangrengang@wust.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11705212 and 11675188).

摘要/Abstract

摘要：

ZnS thin films were prepared by sulfuring zinc thin films at different sulfuration temperatures. The crystal structure, surface morphology, defects, and optical properties of the thin films were characterized by x-ray diffraction (XRD), scanning electron microscopy (SEM), positron annihilation Doppler broadening, and UV-Vis spectrophotometer, respectively. It was found that the (200)-plane preferred orientation of the ZnS thin films changed to (111)-plane with increasing sulfidation temperature. Moreover, a number of large holes were generated at 420℃ and eliminated at 440℃. The concentration of defects was lowest when the sulfuration temperature was 440℃. The optical transmission of all samples was maintained at 60%-80% in the wavelength range of 400 nm-800 nm, and the band energy of the ZnS thin films was approximately 3.5 eV for all treatment temperatures except 430℃.

关键词: ZnS thin films, low-temperature sulfidation, Doppler broadening measurements

Abstract:

Key words: ZnS thin films, low-temperature sulfidation, Doppler broadening measurements

中图分类号: (Infrared transmitting materials)

42.70.Km

42.79.Wc (Optical coatings) 68.37.-d (Microscopy of surfaces, interfaces, and thin films) 81.40.Tv (Optical and dielectric properties related to treatment conditions)

陈书真, 宋力刚, 张鹏, 曹兴忠, 于润升, 王宝义, 魏龙, 张仁刚. Influence of low-temperature sulfidation on the structure of ZnS thin films[J]. 中国物理B, 2019, 28(2): 24214-024214.

Shuzhen Chen(陈书真), Ligang Song(宋力刚), Peng Zhang(张鹏), Xingzhong Cao(曹兴忠), Runsheng Yu(于润升), Baoyi Wang(王宝义), Long Wei(魏龙), Rengang Zhang(张仁刚). Influence of low-temperature sulfidation on the structure of ZnS thin films[J]. Chin. Phys. B, 2019, 28(2): 24214-024214.

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Influence of low-temperature sulfidation on the structure of ZnS thin films

Influence of low-temperature sulfidation on the structure of ZnS thin films

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