中国物理B ›› 2018, Vol. 27 ›› Issue (3): 37302-037302.doi: 10.1088/1674-1056/27/3/037302

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Distinctive distribution of defects in CdZnTe: In ingots and their effects on the photoelectric properties

Xu Fu(符旭), Fang-Bao Wang(王方宝), Xi-Ran Zuo(左希然), Ze-Jian Wang(王泽剑), Qian-Ru Wang(王倩茹), Ke-Qin Wang(王柯钦), Ling-Yan Xu(徐凌燕), Ya-Dong Xu(徐亚东), Rong-Rong Guo(郭榕榕), Hui Yu(于晖), Wan-Qi Jie(介万奇)   

  1. 1 State Key Laboratory of Solidification Processing, and Ministry of Industry and Information Technology(MⅡT) Key Laboratory of Radiation Detection Materials and Devices, Northwestern Polytechnical University, Xi'an 710072, China;
    2 School of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China
  • 收稿日期:2017-12-05 修回日期:2017-12-28 出版日期:2018-03-05 发布日期:2018-03-05
  • 通讯作者: Wan-Qi Jie E-mail:jwq@nwpu.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundations of China (Grant Nos. 51502244, 51702271, U1631116, and 51372205), the National Key Research and Development Program of China (Grant Nos. 2016YFF0101301 and 2016YFE0115200), the Fund of the State Key Laboratory of Solidification Processing in Northwestern Polytechnical University, China (Grant No. SKLSP201741) the Natural Science Basic Research Plan in Shaanxi Province, China (Grant No. 2016KJXX-09), and the Fundamental Research Funds for the Central Universities, China (Grant No. 3102015BJ(II)ZS014).

Distinctive distribution of defects in CdZnTe: In ingots and their effects on the photoelectric properties

Xu Fu(符旭)1, Fang-Bao Wang(王方宝)1, Xi-Ran Zuo(左希然)1, Ze-Jian Wang(王泽剑)1, Qian-Ru Wang(王倩茹)1, Ke-Qin Wang(王柯钦)1, Ling-Yan Xu(徐凌燕)1, Ya-Dong Xu(徐亚东)1, Rong-Rong Guo(郭榕榕)1,2, Hui Yu(于晖)1, Wan-Qi Jie(介万奇)1   

  1. 1 State Key Laboratory of Solidification Processing, and Ministry of Industry and Information Technology(MⅡT) Key Laboratory of Radiation Detection Materials and Devices, Northwestern Polytechnical University, Xi'an 710072, China;
    2 School of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China
  • Received:2017-12-05 Revised:2017-12-28 Online:2018-03-05 Published:2018-03-05
  • Contact: Wan-Qi Jie E-mail:jwq@nwpu.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundations of China (Grant Nos. 51502244, 51702271, U1631116, and 51372205), the National Key Research and Development Program of China (Grant Nos. 2016YFF0101301 and 2016YFE0115200), the Fund of the State Key Laboratory of Solidification Processing in Northwestern Polytechnical University, China (Grant No. SKLSP201741) the Natural Science Basic Research Plan in Shaanxi Province, China (Grant No. 2016KJXX-09), and the Fundamental Research Funds for the Central Universities, China (Grant No. 3102015BJ(II)ZS014).

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摘要： Photoelectric properties of CdZnTe:In samples with distinctive defect distributions are investigated using various techniques. Samples cut from the head (T04) and tail (W02) regions of a crystal ingot show distinct differences in Te inclusion distribution. Obvious difference is not observed in Fourier transform infrared (FTIR) spectra, UV-Vis-NIR transmittance spectra, and I-V measurements. However, carrier mobility of the tip sample is higher than that of the tail according to the laser beam induced current (LBIC) measurements. Low temperature photoluminescence (PL) measurement presents sharp emission peaks of D0X and A0X, and relatively large peak of D0X (or A0X)/Dcomplex for T04, indicating a better crystalline quality. Thermally stimulated current (TSC) spectrum shows higher density of shallow point defects, i.e., Cd vacancies, InCd+, etc., in W02 sample, which could be responsible for the deterioration of electron mobility.

关键词: defects, Te inclusions, semiconducting II-VI materials, CdZnTe

Abstract: Photoelectric properties of CdZnTe:In samples with distinctive defect distributions are investigated using various techniques. Samples cut from the head (T04) and tail (W02) regions of a crystal ingot show distinct differences in Te inclusion distribution. Obvious difference is not observed in Fourier transform infrared (FTIR) spectra, UV-Vis-NIR transmittance spectra, and I-V measurements. However, carrier mobility of the tip sample is higher than that of the tail according to the laser beam induced current (LBIC) measurements. Low temperature photoluminescence (PL) measurement presents sharp emission peaks of D0X and A0X, and relatively large peak of D0X (or A0X)/Dcomplex for T04, indicating a better crystalline quality. Thermally stimulated current (TSC) spectrum shows higher density of shallow point defects, i.e., Cd vacancies, InCd+, etc., in W02 sample, which could be responsible for the deterioration of electron mobility.

Key words: defects, Te inclusions, semiconducting II-VI materials, CdZnTe

中图分类号:  (Charge carriers: generation, recombination, lifetime, trapping, mean free paths)

  • 73.50.Gr
73.61.Ga (II-VI semiconductors) 72.20.Jv (Charge carriers: generation, recombination, lifetime, and trapping) 68.55.Ln (Defects and impurities: doping, implantation, distribution, concentration, etc.)