中国物理B ›› 2018, Vol. 27 ›› Issue (3): 37804-037804.doi: 10.1088/1674-1056/27/3/037804
• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇 下一篇
High mobility ultrathin ZnO p-n homojunction modulated by Zn0.85Mg0.15O quantum barriers
Jing-Jing Yang(杨景景), Qing-Qing Fang(方庆清), Wen-Han Du(杜文汉), Ke-Ke Zhang, Da-Shun Dong(董大舜)
- 1 School of Physics and Materials Science, Anhui University, Hefei 230601, China;
2 Changzhou Institute of Technology, Changzhou 213002, China;
3 School of Materials Science and Engineering, Nanyang Technological University, Singapore
High mobility ultrathin ZnO p-n homojunction modulated by Zn0.85Mg0.15O quantum barriers
Jing-Jing Yang(杨景景)1,2, Qing-Qing Fang(方庆清)1, Wen-Han Du(杜文汉)2,3, Ke-Ke Zhang3, Da-Shun Dong(董大舜)1
- 1 School of Physics and Materials Science, Anhui University, Hefei 230601, China;
2 Changzhou Institute of Technology, Changzhou 213002, China;
3 School of Materials Science and Engineering, Nanyang Technological University, Singapore
摘要：
The adding of ZnMgO asymmetric double barriers (ADB) in p-ZnO:(Li, N)/n-ZnO homojunction affects the p-n junction device performance prominently. Two different homojunctions are fabricated on Si (100) substrates by pulsed laser deposition; one is the traditional p-ZnO:(Li, N)/n-ZnO homojunction with different thicknesses named as S1 (250 nm) and S2 (500 nm), the other is the one with ADB embedded in the n-layer named as Q (265 nm). From the photoluminescence spectra, defect luminescence present in the S-series devices is effectively limited in the Q device. The current-voltage curve of the Q device shows Zener-diode rectification property because the two-dimensional electron gas tunnels through the narrow ZnMgO barrier under a reverse bias, thus decreasing the working p-n homojunction thickness from 500 nm to 265 nm. The ADB-modified homojunction shows higher carrier mobility in the Q device. The electroluminescence of the ZnO homojunction is improved in Q compared to S2, because the holes in p-type ZnO (Li, N) can cross the wide ZnMgO barrier under a forward bias voltage into the ZnO quantum well. Therefore, electron-hole recombination occurs in the narrow bandgap of n-type ZnO, creating an ultraviolet light-emitting diode using the ZnO homojunction.
中图分类号: (Quantum wells)
- 78.67.De