中国物理B ›› 2017, Vol. 26 ›› Issue (11): 116102-116102.doi: 10.1088/1674-1056/26/11/116102

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Slip on the surface of silicon wafers under laser irradiation:Scale effect

Zhi-Chao Jia(贾志超), Ze-Wen Li(李泽文), Jie Zhou(周洁), Xiao-Wu Ni(倪晓武)   

  1. 1. School of Science, Nanjing University of Science & Technology, Nanjing 210094, China;
    2. Advanced Launching Co-innovation Center, Nanjing University of Science & Technology, Nanjing 210094, China
  • 收稿日期:2017-05-05 修回日期:2017-08-18 出版日期:2017-11-05 发布日期:2017-11-05
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 61605079).

Slip on the surface of silicon wafers under laser irradiation:Scale effect

Zhi-Chao Jia(贾志超)1,2, Ze-Wen Li(李泽文)1,2, Jie Zhou(周洁)1,2, Xiao-Wu Ni(倪晓武)1,2   

  1. 1. School of Science, Nanjing University of Science & Technology, Nanjing 210094, China;
    2. Advanced Launching Co-innovation Center, Nanjing University of Science & Technology, Nanjing 210094, China
  • Received:2017-05-05 Revised:2017-08-18 Online:2017-11-05 Published:2017-11-05
  • Contact: Xiao-Wu Ni E-mail:nxw@njust.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 61605079).

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摘要： The slip mechanism on the surface of silicon wafers under laser irradiation was studied by numerical simulations and experiments. Firstly, the slip was explained by an analysis of the generalized stacking fault energy and the associated restoring forces. Activation of unexpected {110} slip planes was predicted to be a surface phenomenon. Experimentally, {110} slip planes were activated by changing doping concentrations of wafers and laser parameters respectively. Slip planes were {110} when slipping started within several atomic layers under the surface and turned into {111} with deeper slip. The scale effect was shown to be an intrinsic property of silicon.

关键词: slip, silicon, laser, scale effect

Abstract: The slip mechanism on the surface of silicon wafers under laser irradiation was studied by numerical simulations and experiments. Firstly, the slip was explained by an analysis of the generalized stacking fault energy and the associated restoring forces. Activation of unexpected {110} slip planes was predicted to be a surface phenomenon. Experimentally, {110} slip planes were activated by changing doping concentrations of wafers and laser parameters respectively. Slip planes were {110} when slipping started within several atomic layers under the surface and turned into {111} with deeper slip. The scale effect was shown to be an intrinsic property of silicon.

Key words: slip, silicon, laser, scale effect

中图分类号:  (Semiconductors)

  • 61.82.Fk
61.80.Ba (Ultraviolet, visible, and infrared radiation effects (including laser radiation)) 61.80.-x (Physical radiation effects, radiation damage) 52.38.Mf (Laser ablation)