Magnesium incorporation efficiencies in MgxZn1-xO films on ZnO substrates grown by metalorganic chemical vapor deposition

doi:10.1088/1674-1056/26/6/068104

中国物理B ›› 2017, Vol. 26 ›› Issue (6): 68104-068104.doi: 10.1088/1674-1056/26/6/068104

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Magnesium incorporation efficiencies in Mg_xZn_1-xO films on ZnO substrates grown by metalorganic chemical vapor deposition

Qi-Chang Hu(胡启昌), Kai Ding(丁凯)

1 College of Mechanical and Electronic Engineering, Fujian Agriculture and Forestry University, Fuzhou 350002, China;
2 Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China

收稿日期:2016-10-31 修回日期:2017-03-04 出版日期:2017-06-05 发布日期:2017-06-05
通讯作者: Kai Ding E-mail:kding@fjirsm.ac.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 61474121) and the Major Scientific Project of Fujian Province, China (Grant No. 2014NZ0002-2).

Magnesium incorporation efficiencies in Mg_xZn_1-xO films on ZnO substrates grown by metalorganic chemical vapor deposition

Qi-Chang Hu(胡启昌)¹, Kai Ding(丁凯)²

1 College of Mechanical and Electronic Engineering, Fujian Agriculture and Forestry University, Fuzhou 350002, China;
2 Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China

Received:2016-10-31 Revised:2017-03-04 Online:2017-06-05 Published:2017-06-05
Contact: Kai Ding E-mail:kding@fjirsm.ac.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 61474121) and the Major Scientific Project of Fujian Province, China (Grant No. 2014NZ0002-2).

摘要/Abstract

摘要： We investigate the magnesium (Mg) incorporation efficiencies in Mg_xZn_1-xO films on c-plane Zn-face ZnO substrates by using metalorganic chemical vapor deposition (MOCVD) technique. In order to deposit high quality Mg_xZn_1-xO films, atomically smooth epi-ready surfaces of the hydrothermal grown ZnO substrates are achieved by thermal annealing in O₂ atmosphere and characterized by atomic force microscope (AFM). The AFM, scanning electron microscope (SEM), and x-ray diffraction (XRD) studies demonstrate that the Mg_xZn_1-xO films each have flat surface and hexagonal wurtzite structure without phase segregation at up to Mg content of 34.4%. The effects of the growth parameters including substrate temperature, reactor pressure and VI/II ratio on Mg content in the films are investigated by XRD analysis based on Vegard's law, and confirmed by photo-luminescence spectra and x-ray photoelectron spectroscopy as well. It is indicated that high substrate temperature, low reactor pressure, and high VI/II ratio are good for obtaining high Mg content.

关键词: Mg_xZn_1-xO, MOCVD, incorporation efficiency, ZnO bulk crystal

Abstract: We investigate the magnesium (Mg) incorporation efficiencies in Mg_xZn_1-xO films on c-plane Zn-face ZnO substrates by using metalorganic chemical vapor deposition (MOCVD) technique. In order to deposit high quality Mg_xZn_1-xO films, atomically smooth epi-ready surfaces of the hydrothermal grown ZnO substrates are achieved by thermal annealing in O₂ atmosphere and characterized by atomic force microscope (AFM). The AFM, scanning electron microscope (SEM), and x-ray diffraction (XRD) studies demonstrate that the Mg_xZn_1-xO films each have flat surface and hexagonal wurtzite structure without phase segregation at up to Mg content of 34.4%. The effects of the growth parameters including substrate temperature, reactor pressure and VI/II ratio on Mg content in the films are investigated by XRD analysis based on Vegard's law, and confirmed by photo-luminescence spectra and x-ray photoelectron spectroscopy as well. It is indicated that high substrate temperature, low reactor pressure, and high VI/II ratio are good for obtaining high Mg content.

Key words: Mg_xZn_1-xO, MOCVD, incorporation efficiency, ZnO bulk crystal

中图分类号: (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))

81.15.Gh

68.37.-d (Microscopy of surfaces, interfaces, and thin films) 71.55.Gs (II-VI semiconductors)

胡启昌, 丁凯. Magnesium incorporation efficiencies in Mg_xZn_1-xO films on ZnO substrates grown by metalorganic chemical vapor deposition[J]. 中国物理B, 2017, 26(6): 68104-068104.

Qi-Chang Hu(胡启昌), Kai Ding(丁凯). Magnesium incorporation efficiencies in Mg_xZn_1-xO films on ZnO substrates grown by metalorganic chemical vapor deposition[J]. Chin. Phys. B, 2017, 26(6): 68104-068104.

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Magnesium incorporation efficiencies in Mg_xZn_1-xO films on ZnO substrates grown by metalorganic chemical vapor deposition

Magnesium incorporation efficiencies in Mg_xZn_1-xO films on ZnO substrates grown by metalorganic chemical vapor deposition

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