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An optimized fitting function with least square approximation inInAs/AlSb HFET small-signal model for characterizingthe frequency dependency of impact ionization effect
关赫, 郭辉
An optimized fitting function with least square approximation inInAs/AlSb HFET small-signal model for characterizingthe frequency dependency of impact ionization effect
He Guan(关赫), Hui Guo(郭辉)
中国物理B . 2017, (
5
): 58501 -058501 . DOI: 10.1088/1674-1056/26/5/058501