中国物理B ›› 2017, Vol. 26 ›› Issue (3): 33201-033201.doi: 10.1088/1674-1056/26/3/033201

所属专题： TOPICAL REVIEW — 2D materials: physics and device applications

• TOPICAL REVIEW—2D materials: physics and device applications • 上一篇    下一篇

Atomic crystals resistive switching memory

Chunsen Liu(刘春森), David Wei Zhang(张卫), Peng Zhou(周鹏)   

  1. State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai 200433, China
  • 收稿日期:2016-09-12 修回日期:2016-10-29 出版日期:2017-03-05 发布日期:2017-03-05
  • 通讯作者: Peng Zhou E-mail:pengzhou@fudan.edu.cn
  • 基金资助:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 61376093 and 61622401) and the National Key Research and Development Program of China (Grant No. 2016YFA0203900).

Atomic crystals resistive switching memory

Chunsen Liu(刘春森), David Wei Zhang(张卫), Peng Zhou(周鹏)   

  1. State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai 200433, China
  • Received:2016-09-12 Revised:2016-10-29 Online:2017-03-05 Published:2017-03-05
  • Contact: Peng Zhou E-mail:pengzhou@fudan.edu.cn
  • Supported by:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 61376093 and 61622401) and the National Key Research and Development Program of China (Grant No. 2016YFA0203900).

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摘要：

Facing the growing data storage and computing demands, a high accessing speed memory with low power and non-volatile character is urgently needed. Resistive access random memory with 4F2 cell size, switching in sub-nanosecond, cycling endurances of over 1012 cycles, and information retention exceeding 10 years, is considered as promising next-generation non-volatile memory. However, the energy per bit is still too high to compete against static random access memory and dynamic random access memory. The sneak leakage path and metal film sheet resistance issues hinder the further scaling down. The variation of resistance between different devices and even various cycles in the same device, hold resistive access random memory back from commercialization. The emerging of atomic crystals, possessing fine interface without dangling bonds in low dimension, can provide atomic level solutions for the obsessional issues. Moreover, the unique properties of atomic crystals also enable new type resistive switching memories, which provide a brand-new direction for the resistive access random memory.

关键词: atomic crystals, two-dimensional materials, resistive switching memory

Abstract:

Facing the growing data storage and computing demands, a high accessing speed memory with low power and non-volatile character is urgently needed. Resistive access random memory with 4F2 cell size, switching in sub-nanosecond, cycling endurances of over 1012 cycles, and information retention exceeding 10 years, is considered as promising next-generation non-volatile memory. However, the energy per bit is still too high to compete against static random access memory and dynamic random access memory. The sneak leakage path and metal film sheet resistance issues hinder the further scaling down. The variation of resistance between different devices and even various cycles in the same device, hold resistive access random memory back from commercialization. The emerging of atomic crystals, possessing fine interface without dangling bonds in low dimension, can provide atomic level solutions for the obsessional issues. Moreover, the unique properties of atomic crystals also enable new type resistive switching memories, which provide a brand-new direction for the resistive access random memory.

Key words: atomic crystals, two-dimensional materials, resistive switching memory

中图分类号:  (Other topics in atomic properties and interactions of atoms with photons)

  • 32.90.+a
51.50.+v (Electrical properties) 63.22.Np (Layered systems)