Electron localization in ultrathin films of three-dimensional topological insulators

doi:10.1088/1674-1056/25/11/117201

中国物理B ›› 2016, Vol. 25 ›› Issue (11): 117201-117201.doi: 10.1088/1674-1056/25/11/117201

所属专题： TOPICAL REVIEW — Topological electronic states

• TOPICAL REVIEW—Topological electronic states • 上一篇下一篇

Electron localization in ultrathin films of three-dimensional topological insulators

Jian Liao(廖剑), Gang Shi(史刚), Nan Liu(刘楠), Yongqing Li(李永庆)

Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

收稿日期:2016-03-18 修回日期:2016-04-11 出版日期:2016-11-05 发布日期:2016-11-05
通讯作者: Yongqing Li E-mail:yqli@iphy.ac.cn
基金资助:
Project supported by the National Basic Research Program of China (Grant Nos. 2012CB921703 and 2015CB921102), the National Natural Science Foundation of China (Grant Nos. 61425015, 11374337, and 91121003), and the Strategic Priority Research Program of the Chinese Academy of Sciences (Grant No. XDB070202).

Electron localization in ultrathin films of three-dimensional topological insulators

Jian Liao(廖剑), Gang Shi(史刚), Nan Liu(刘楠), Yongqing Li(李永庆)

Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

Received:2016-03-18 Revised:2016-04-11 Online:2016-11-05 Published:2016-11-05
Contact: Yongqing Li E-mail:yqli@iphy.ac.cn
Supported by:
Project supported by the National Basic Research Program of China (Grant Nos. 2012CB921703 and 2015CB921102), the National Natural Science Foundation of China (Grant Nos. 61425015, 11374337, and 91121003), and the Strategic Priority Research Program of the Chinese Academy of Sciences (Grant No. XDB070202).

摘要/Abstract

摘要：

The recent discovery of three-dimensional (3D) topological insulators (TIs) has provided a fertile ground for obtaining further insights into electron localization in condensed matter systems. In the past few years, a tremendous amount of research effort has been devoted to investigate electron transport properties of 3D TIs and their low dimensional structures in a wide range of disorder strength, covering transport regimes from weak antilocalization to strong localization. The knowledge gained from these studies not only offers sensitive means to probe the surface states of 3D TIs but also forms a basis for exploring novel topological phases. In this article, we briefly review the main experimental progress in the study of the localization in 3D TIs, with a focus on the latest results on ultrathin TI films. Some new transport data will also be presented in order to complement those reported previously in the literature.

关键词: localization, topological insulator, metal-insulator transition, quantum transport

Abstract:

Key words: localization, topological insulator, metal-insulator transition, quantum transport

中图分类号: (Localization effects (Anderson or weak localization))

72.15.Rn

73.20.Fz (Weak or Anderson localization) 73.25.+i (Surface conductivity and carrier phenomena)

廖剑, 史刚, 刘楠, 李永庆. Electron localization in ultrathin films of three-dimensional topological insulators[J]. 中国物理B, 2016, 25(11): 117201-117201.

Jian Liao(廖剑), Gang Shi(史刚), Nan Liu(刘楠), Yongqing Li(李永庆). Electron localization in ultrathin films of three-dimensional topological insulators[J]. Chin. Phys. B, 2016, 25(11): 117201-117201.

参考文献 78

[1]	Anderson P W 1958 Phys. Rev. 109 1492
[2]	Lee P A and Ramakrishnan T V 1985 Rev. Mod. Phys. 57 287
[3]	Abrahams E, Anderson P W, Licciardello D C and Ramakrishnan T V 1979 Phys. Rev. Lett. 42 673
[4]	Gorkov L P, Larkin A I and Khmelnitzkii D E 1979 JETP Lett. 30 228
[5]	Bergmann G 1984 Phys. Rep. 107 1
[6]	Ovadyahu Z 1999 Waves in Random Media 9 241
[7]	Kravchenko S V, Kravchenko G V, Furneaux J E, Pudalov V M and D'Iorio M 1994 Phys. Rev. B 50 8039
[8]	Kravchenko S V and Sarachik M P 2004 Rep. Prog. Phys. 67 1
[9]	Evers F and Mirlin A D 2008 Rev. Mod. Phys. 80 1355
[10]	Spivak B, Kravchenko S V, Kivelson S A and Gao X P A 2010 Rev. Mod. Phys. 82 1743
[11]	Hasan M Z and Kane C L 2010 Rev. Mod. Phys. 82 3045
[12]	Qi X L and Zhang S C 2011 Rev. Mod. Phys. 83 1057
[13]	Ostrovsky P M, Gornyi I V and Mirlin A D 2007 Phys. Rev. Lett. 98 256801
[14]	Ryu S, Mudry C, Obuse H and Furusaki A 2007 Phys. Rev. Lett. 99 116601
[15]	Ostrovsky P M, Gornyi I V and MirlinA D 2010 Phys. Rev. Lett. 105 36803
[16]	König E J, Ostrovsky P M, Protopopov I V, Gornyi I V, Burmistrov I S and Mirlin A D 2013 Phys. Rev. B 88 035106
[17]	Chen J, Qin H J, Yang F, Liu J, Guan T, Qu F M, Zhang G H, Shi J R, Xie X C, Yang C L, Wu K H, Li Y Q and Lu L 2010 Phys. Rev. Lett. 105 176602
[18]	Checkelsky J G, Hor Y S, Cava R J and Ong N P 2011 Phys. Rev. B 84 165311
[19]	He H T, Wang G, Zhang T, Sou I K, Wong G K L, Wang J N, Lu H Z,Shen S Q and Zhang F C 2011 Phys. Rev. Lett. 106 166805
[20]	Chen J, He X Y, Wu K H, Ji Z Q, Lu L, Shi J R, Smet J H and Li Y Q 2011 Phys. Rev. B 83 241304
[21]	Steinberg H, Lalo J B, Fatemi V, Moodera J S and Jarillo-Herrero P 2011 Phys. Rev. B 84 233101
[22]	Cha J J, Kong D S, Hong S S, Analytis J G, Lai K J and Cui Y 2012 Nano Lett. 12 1107
[23]	Brahlek M, Koirala N, Salehi M, Bansal N and Oh S 2014 Phys. Rev.Lett. 113 026801
[24]	Li YQ, Wu K H, Shi J R and Xie X C 2012 Front. Phys. 7 165
[25]	Analytis J G, McDonald R D, Riggs S C, Chu J H, Boebinger G S and Fisher I R 2010 Nat. Phys. 6 960
[26]	Zhang J S, Chang C Z, Zhang Z C, Wen J, Feng X, Li K, Liu M H, He K, Wang L L, Chen X, Xue Q K, Ma X C and Wang Y Y 2011 Nat.Commun. 2 574
[27]	Kong D S, Chen Y L, Cha J J, Zhang Q F, Analytis J G, Lai K J, Liu ZK, Hong S S, Koski K J, Mo S K, Hussain Z, Fisher I R, Shen Z X and Cui Y 2011 Nat. Nanotech. 6 705
[28]	Ren Z, Taskin A A, Sasaki S, Segawa K and Ando Y 2011 Phys. Rev.B 84 165311
[29]	Xiong J, Petersena A C, Qua D, Horb Y S, Cavab R J and Onga N P 2012 Physica E 44 917
[30]	He X Y, Guan T, Wang X X, Feng B J, Cheng P, Chen L, Li Y Q and Wu K H 2012 Appl. Phys. Lett. 101 123111
[31]	Kim D, Cho S, Butch N P, Syers P, Kirshenbaum K, Adam S, Paglione J and Fuhrer M S 2012 Nat. Phys. 8 459
[32]	Lang M R, He L, Kou X F, Upadhyaya P, Fan Y B, Chu H, Ren Y, Bardarson J H, Jiang W J, Choi E S, Wang Y, Yeh N C, Moore J and Wang K L 2013 Nano Lett. 13 48
[33]	Kim D, Syers P, Butch N P, Paglione J and Fuhrer M S 2013 Nat. Commun. 4 2040
[34]	Lu H Z, Shan W Y, Yao W, Niu Q and Shen S Q 2010 Phys. Rev. B 81 115407
[35]	Liu C X, Zhang H, Yan B, Qi X L, Frauenheim T, Dai X, Fang Z and Zhang S C 2010 Phys. Rev. B 81 041307(R)
[36]	Linder J, Yokoyama T and Sudbo A 2009 Phys. Rev. B 80 205401
[37]	Lu H Z, Shi J R and Shen S Q 2011 Phys. Rev. Lett. 107 076801
[38]	Zhang Y, He K, Chang C Z, Song C L, Wang L L, Chen X, Jia J F, Fang Z, Dai X, Shan W Y, Shen S Q, Niu Q, Qi X L, Zhang S C, Ma X C and Xue Q K 2010 Nat. Phys. 6 584
[39]	Jiang Y P, Wang Y L, Chen M, Li Z, Song C L, He K, Wang L L, Chen X, Ma X C and Xue Q K 2012 Phys. Rev. Lett. 108 016401
[40]	Liao J, Ou Y B, Feng X, Yang S, Lin C J, Yang W M, Wu K H, He K, Ma X C, Xue Q K and Li Y Q 2015 Phys. Rev. Lett. 114 216601
[41]	Taskin A A, Sasaki S, Segawa K and Ando Y 2012 Phys. Rev. Lett. 109 066803
[42]	Culcer D 2012 Physica E 44 860
[43]	Ando Y J 2013 J. Phys. Soc. Jpn. 82 102001
[44]	Bardarson J H and Moore J E 2013 Rep. Prog. Phys. 76 056501
[45]	Shen S Q 2012 Topological Insulators:Dirac Equation in Condensed Matters (Heidelberg:Springer)
[46]	Liu M H, Chang C Z, Zhang Z C, Zhang Y, Ruan W, He K, Wang L L, Chen X, Jia J F, Zhang S C, Xue Q K, Ma X C and Wang Y Y 2011 Phys. Rev. B 83 165440
[47]	Wang J, Dasilva A M, Chang C Z, He K, Jain J K, Samarth N, Ma X C, Xue Q K and Chan M H W 2011 Phys. Rev. B 83 245438
[48]	Takagaki Y, Jenichen B, JahnU, Ramsteiner M and Friedland K J 2012 Phys. Rev. B 85 115314
[49]	Chiu S P and Lin J J 2013 Phys. Rev. B 87 035122
[50]	Lu H Z and Shen S Q 2014 Phys. Rev. Lett. 112 146601
[51]	Hikami S, Larkin A I and Nagaoka Y 1980 Prog. Theor. Phys. 63 707
[52]	Kim Y S, Brahlek M, Bansal N, Edrey E, Kapilevich G A, Iida K, Tanimura M, Horibe Y, Cheong S W and Oh S 2011 Phys. Rev. B 84 73109
[53]	Raichev O E and Vasilopoulos P 2000 J. Phys.:Condens. Matter 12 589
[54]	GarateI and Glazman L 2012 Phys. Rev. B 86 035422
[55]	Yang W M, Lin C J, Liao J and Li Y Q 2013 Chin. Phys. B 22 097202
[56]	Yuan H T, Liu H W, Shimotani H, Guo H, Chen M W, Xue Q K and Iwasa Y 2011 Nano Lett. 11 2601
[57]	Yoshimi R, Tsukazaki A, Kozuka Y, Falson J, Takahashi K S, Checkelsky J G, NagaosaN, Kawasaki M and Tokura Y 2015 Nat. Commun. 6 6627
[58]	Li Z G, Meng Y Z, Pan J, Chen T S, Hong X C, Li S Y, Wang X F, Song F Q and Wang B G 2014 Appl. Phys. Express 7 065202
[59]	Li Z G, Garate I, Pan J, Wan X G, Chen T S, Ning W, Zhang X O, Song F Q, Meng Y Z, Hong X C, Wang X F, Pi L, Wang X R, Wang B G, Li S Y, Reed M A, Glazman L and Wang G H 2015 Phys. Rev. B 91 041401(R)
[60]	Jauregui L A, Pettes M T, Rokhinson L P, Shi L and Chen Y P 2015 Sci. Rep. 5 8452
[61]	Shklovskii B I and Spivak B Z 1991 Hopping Transport in Solids (Amsterdam:North-Holland)
[62]	Skinner B, Chen T R and Shklovskii B I 2012 Phys. Rev. Lett. 109 176801
[63]	Shapir Y and Ovadyahu Z 1989 Phys. Rev. B 40 12441
[64]	Zhang Y Z, Dai P H and Sarachik M P 1992 Phys. Rev. B 45 9473
[65]	Hsu S Y and Valles J M 1995 Phys. Rev. Lett. 74 2331
[66]	Entin-Wohlman O, Imry Y and Sivan U 1989 Phys. Rev. B 40 8342
[67]	Schirmacher W 1990 Phys. Rev. B 41 2461
[68]	Lu H Z and Shen S Q 2014 Proc. SPIE 9167 91672E
[69]	In Ref.
[32]	, positive low field magnetoconductivity was reported to appear at sheet resistance values as low as about 20 kΩ in a top-gated 4 nm thick (Bi,Sb)2Te3 sample. This interesting observation cannot be attributed to the transport in the strong localization regime discussed in Ref.
[40]	Further work is needed to confirm whether it is related to the gapped helical states.
[70]	Minkov G, Germanenko A and Gornyi I 2004 Phys. Rev. B 70 245423
[71]	Liu M H, Zhang J S, Chang C Z, Zhang Z C, Feng X, Li K, He K, Wang L L, Chen X, Dai X, Fang Z, Xue Q K, Ma X C and Wang Y Y 2012 Phys. Rev. Lett. 108 036805
[72]	Yang Q I, Dolev M, Zhang L, Zhao J F, Fried A D, Schemm E, Liu M, Palevski A, Marshall A F, Risbud S H and Kapitulnik A 2013 Phys. Rev. B 88 081407(R)
[73]	Lin C J, He X Y, Liao J, Wang X X, Sacksteder IV V, Yang W M, Guan T, Zhang Q M, Gu L, Zhang G Y, Zeng C G, Dai X, Wu K H and Li Y Q 2013 Phys. Rev. B 88 041307
[74]	Pershoguba S S, Abergel D S L, Yakovenko V M and Balatsky A V 2015 Phys. Rev. B 91 085418
[75]	Peng H L, Lai K J, Kong D, Meister S, Chen Y L, Qi X L, Zhang S C, Shen Z X and Cui Y 2010 Nat. Mater. 9 225
[76]	Li Z G, Qin Y Y, Song F Q, Wang Q H, Wang X F, Wang B G, DingH F, van Haesondonck C, Wan J G, Zhang Y H and Wang G H 2012 Appl. Phys. Lett. 100 083107
[77]	Tian M L, Ning W, Qu Z, Du H F, Wang J and Zhang Y H 2013 Sci. Rep. 3 1212
[78]	Brahlek M, Koirala N, Bansal N and Oh S 2015 Sol. Stat. Commun. 215-216 54

Electron localization in ultrathin films of three-dimensional topological insulators

Electron localization in ultrathin films of three-dimensional topological insulators

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