中国物理B ›› 2016, Vol. 25 ›› Issue (1): 18102-018102.doi: 10.1088/1674-1056/25/1/018102
• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇 下一篇
Ya-Chao Zhang(张雅超), Xiao-Wei Zhou(周小伟), Sheng-Rui Xu (许晟瑞), Da-Zheng Chen(陈大正), Zhi-Zhe Wang(王之哲), Xing Wang(汪星), Jin-Feng Zhang(张金风), Jin-Cheng Zhang(张进成), Yue Hao(郝跃)
Ya-Chao Zhang(张雅超), Xiao-Wei Zhou(周小伟), Sheng-Rui Xu (许晟瑞), Da-Zheng Chen(陈大正), Zhi-Zhe Wang(王之哲), Xing Wang(汪星), Jin-Feng Zhang(张金风), Jin-Cheng Zhang(张进成), Yue Hao(郝跃)
摘要:
Pulsed metal organic chemical vapor deposition is introduced into the growth of InGaN channel heterostructure for improving material qualities and transport properties. High-resolution transmission electron microscopy imaging shows the phase separation free InGaN channel with smooth and abrupt interface. A very high two-dimensional electron gas density of approximately 1.85 × 1013 cm-2 is obtained due to the superior carrier confinement. In addition, the Hall mobility reaches 967 cm2/V·s, owing to the suppression of interface roughness scattering. Furthermore, temperature-dependent Hall measurement results show that InGaN channel heterostructure possesses a steady two-dimensional electron gas density over the tested temperature range, and has superior transport properties at elevated temperatures compared with the traditional GaN channel heterostructure. The gratifying results imply that InGaN channel heterostructure grown by pulsed metal organic chemical vapor deposition is a promising candidate for microwave power devices.
中图分类号: (III-V semiconductors)