Electron Raman scattering in semiconductor quantum well wire of cylindrical ring geometry

doi:10.1088/1674-1056/24/11/117302

中国物理B ›› 2015, Vol. 24 ›› Issue (11): 117302-117302.doi: 10.1088/1674-1056/24/11/117302

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Electron Raman scattering in semiconductor quantum well wire of cylindrical ring geometry

Re. Betancourt-Riera^{a b}, Ri. Betancourt-Riera^a, J. M. Nieto Jalil^c, R. Riera^b

a Instituto Tecnológico de Hermosillo. Avenida Tecnológico S/N, Col. Sahuaro, C.P. 83170, Hermosillo, Sonora, México;
b Departamento de Investigación en Física, Universidad de Sonora, Apartado Postal 5-088, C.P. 83190, Hermosillo, Sonora, México;
c Tecnológico de Monterrey-Campus Sonora Norte. Bulevar Enrique Mazón López No. 965, C.P. 83000, Hermosillo, Sonora, México

收稿日期:2015-03-11 修回日期:2015-06-11 出版日期:2015-11-05 发布日期:2015-11-05
通讯作者: Re. Betancourt-Riera E-mail:rbriera@gmail.com

Electron Raman scattering in semiconductor quantum well wire of cylindrical ring geometry

Re. Betancourt-Riera^{a b}, Ri. Betancourt-Riera^a, J. M. Nieto Jalil^c, R. Riera^b

a Instituto Tecnológico de Hermosillo. Avenida Tecnológico S/N, Col. Sahuaro, C.P. 83170, Hermosillo, Sonora, México;
b Departamento de Investigación en Física, Universidad de Sonora, Apartado Postal 5-088, C.P. 83190, Hermosillo, Sonora, México;
c Tecnológico de Monterrey-Campus Sonora Norte. Bulevar Enrique Mazón López No. 965, C.P. 83000, Hermosillo, Sonora, México

Received:2015-03-11 Revised:2015-06-11 Online:2015-11-05 Published:2015-11-05
Contact: Re. Betancourt-Riera E-mail:rbriera@gmail.com

摘要/Abstract

摘要： We study the electron states and the differential cross section for an electron Raman scattering process in a semiconductor quantum well wire of cylindrical ring geometry. The electron Raman scattering developed here can be used to provide direct information about the electron band structures of these confinement systems. We assume that the system grows in a GaAs/Al_0.35Ga_0.65As matrix. The system is modeled by considering T = 0 K and also a single parabolic conduction band, which is split into a sub-band system due to the confinement. The emission spectra are discussed for different scattering configurations, and the selection rules for the processes are also studied. Singularities in the spectra are found and interpreted.

关键词: electron states, Raman scattering, selection rules, quantum well wires

Abstract: We study the electron states and the differential cross section for an electron Raman scattering process in a semiconductor quantum well wire of cylindrical ring geometry. The electron Raman scattering developed here can be used to provide direct information about the electron band structures of these confinement systems. We assume that the system grows in a GaAs/Al_0.35Ga_0.65As matrix. The system is modeled by considering T = 0 K and also a single parabolic conduction band, which is split into a sub-band system due to the confinement. The emission spectra are discussed for different scattering configurations, and the selection rules for the processes are also studied. Singularities in the spectra are found and interpreted.

Key words: electron states, Raman scattering, selection rules, quantum well wires

中图分类号: (Quantum wires)

73.21.Hb

78.67.Lt (Quantum wires)

Re. Betancourt-Riera, Ri. Betancourt-Riera, J. M. Nieto Jalil, R. Riera. Electron Raman scattering in semiconductor quantum well wire of cylindrical ring geometry[J]. 中国物理B, 2015, 24(11): 117302-117302.

Re. Betancourt-Riera, Ri. Betancourt-Riera, J. M. Nieto Jalil, R. Riera. Electron Raman scattering in semiconductor quantum well wire of cylindrical ring geometry[J]. Chin. Phys. B, 2015, 24(11): 117302-117302.

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Electron Raman scattering in semiconductor quantum well wire of cylindrical ring geometry

Electron Raman scattering in semiconductor quantum well wire of cylindrical ring geometry

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