中国物理B ›› 2015, Vol. 24 ›› Issue (7): 78503-078503.doi: 10.1088/1674-1056/24/7/078503

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Bandwidth improvement of high power uni-traveling-carrier photodiodes by reducing the series resistance and capacitance

李进, 熊兵, 孙长征, 罗毅, 王健, 郝智彪, 韩彦军, 汪莱, 李洪涛   

  1. Tsinghua National Laboratory for Information Science and Technology/State Key Laboratory on Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
  • 收稿日期:2015-02-01 修回日期:2015-03-25 出版日期:2015-07-05 发布日期:2015-07-05
  • 基金资助:

    Project supported by the National Basic Research Program of China (Grant Nos. 2012CB315605 and 2014CB340002), the National Natural Science Foundation of China (Grant Nos. 61176015, 61176059, 61210014, 61321004, and 61307024), and the Open Fund of State Key Laboratory on Integrated Optoelectronics, China (Grant Nos. IOSKL2012KF08 and IOSKL2014KF09).

Bandwidth improvement of high power uni-traveling-carrier photodiodes by reducing the series resistance and capacitance

Li Jin (李进), Xiong Bing (熊兵), Sun Chang-Zheng (孙长征), Luo Yi (罗毅), Wang Jian (王健), Hao Zhi-Biao (郝智彪), Han Yan-Jun (韩彦军), Wang Lai (汪莱), Li Hong-Tao (李洪涛)   

  1. Tsinghua National Laboratory for Information Science and Technology/State Key Laboratory on Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
  • Received:2015-02-01 Revised:2015-03-25 Online:2015-07-05 Published:2015-07-05
  • Contact: Xiong Bing, Luo Yi E-mail:bxiong@tsinghua.edu.cn;luoy@tsinghua.edu.cn
  • Supported by:

    Project supported by the National Basic Research Program of China (Grant Nos. 2012CB315605 and 2014CB340002), the National Natural Science Foundation of China (Grant Nos. 61176015, 61176059, 61210014, 61321004, and 61307024), and the Open Fund of State Key Laboratory on Integrated Optoelectronics, China (Grant Nos. IOSKL2012KF08 and IOSKL2014KF09).

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摘要：

A backside illuminated mesa-structure InGaAs/InP modified uni-traveling-carrier photodiode (MUTC-PD) with wide bandwidth and high saturation power is fabricated and investigated. The device structure is optimized to reduce the capacitance and resistance. For the 22-μm-diameter device, the maximum responsivity at 1.55 μm is 0.5 A/W, and the 3-dB cutoff frequency reaches up to 28 GHz. The output photocurrent at the 1-dB compression point is measured to be 54 mA at 25 GHz, with a corresponding output radio frequency (RF) power of up to 15.5 dBm. The saturation characteristics of the MUTC-PD are also verified by the electric field simulation, and electric field collapse is found to be the cause of the saturation phenomenon.

关键词: wide bandwidth, high power, uni-traveling-carrier photodiodes

Abstract:

A backside illuminated mesa-structure InGaAs/InP modified uni-traveling-carrier photodiode (MUTC-PD) with wide bandwidth and high saturation power is fabricated and investigated. The device structure is optimized to reduce the capacitance and resistance. For the 22-μm-diameter device, the maximum responsivity at 1.55 μm is 0.5 A/W, and the 3-dB cutoff frequency reaches up to 28 GHz. The output photocurrent at the 1-dB compression point is measured to be 54 mA at 25 GHz, with a corresponding output radio frequency (RF) power of up to 15.5 dBm. The saturation characteristics of the MUTC-PD are also verified by the electric field simulation, and electric field collapse is found to be the cause of the saturation phenomenon.

Key words: wide bandwidth, high power, uni-traveling-carrier photodiodes

中图分类号:  (Photodetectors (including infrared and CCD detectors))

  • 85.60.Gz
78.55.Cr (III-V semiconductors) 85.30.De (Semiconductor-device characterization, design, and modeling)