Nondestructive measurement of thermal contact resistance for the power vertical double-diffused metal-oxide-semiconductor

doi:10.1088/1674-1056/24/7/076601

中国物理B ›› 2015, Vol. 24 ›› Issue (7): 76601-076601.doi: 10.1088/1674-1056/24/7/076601

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Nondestructive measurement of thermal contact resistance for the power vertical double-diffused metal-oxide-semiconductor

李睿, 郭春生, 冯士维, 石磊, 朱慧, 王琳

College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing m 100124, China

收稿日期:2014-09-09 修回日期:2015-02-02 出版日期:2015-07-05 发布日期:2015-07-05
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 61204081).

Nondestructive measurement of thermal contact resistance for the power vertical double-diffused metal-oxide-semiconductor

Li Rui (李睿), Guo Chun-Sheng (郭春生), Feng Shi-Wei (冯士维), Shi Lei (石磊), Zhu Hui (朱慧), Wang Lin (王琳)

College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing m 100124, China

Received:2014-09-09 Revised:2015-02-02 Online:2015-07-05 Published:2015-07-05
Contact: Guo Chun-Sheng E-mail:guocs@bjut.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 61204081).

摘要/Abstract

摘要：

To obtain thermal contact resistance (TCR) between the vertical double-diffused metal-oxide-semiconductor (VDMOS) and the heat sink, we derived the relationship between the total thermal resistance and the contact force imposed on the VDMOS. The total thermal resistance from the chip to the heat sink is measured under different contact forces, and the TCR can be extracted nondestructively from the derived relationship. Finally, the experimental results are compared with the simulation results.

关键词: thermal contact resistance, nondestructive measurement method, structure function, contact pressure

Abstract:

Key words: thermal contact resistance, nondestructive measurement method, structure function, contact pressure

中图分类号: (Nonelectronic thermal conduction and heat-pulse propagation in solids;thermal waves)

66.70.-f

68.60.Wm (Other nonelectronic physical properties) 72.15.Cz (Electrical and thermal conduction in amorphous and liquid metals and Alloys ?) 84.30.Jc (Power electronics; power supply circuits)

李睿, 郭春生, 冯士维, 石磊, 朱慧, 王琳. Nondestructive measurement of thermal contact resistance for the power vertical double-diffused metal-oxide-semiconductor[J]. 中国物理B, 2015, 24(7): 76601-076601.

Li Rui (李睿), Guo Chun-Sheng (郭春生), Feng Shi-Wei (冯士维), Shi Lei (石磊), Zhu Hui (朱慧), Wang Lin (王琳). Nondestructive measurement of thermal contact resistance for the power vertical double-diffused metal-oxide-semiconductor[J]. Chin. Phys. B, 2015, 24(7): 76601-076601.

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Nondestructive measurement of thermal contact resistance for the power vertical double-diffused metal-oxide-semiconductor

Nondestructive measurement of thermal contact resistance for the power vertical double-diffused metal-oxide-semiconductor

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