Linear and nonlinear optical properties of Sb-doped GeSe2 thin films

doi:10.1088/1674-1056/24/6/066801

中国物理B ›› 2015, Vol. 24 ›› Issue (6): 66801-066801.doi: 10.1088/1674-1056/24/6/066801

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Linear and nonlinear optical properties of Sb-doped GeSe₂ thin films

张振营^a, 陈芬^a, 陆顺斌^b, 王永辉^a, 沈祥^c, 戴世勋^c, 聂秋华^c

a College of Information Science and Engineering, Ningbo University, Ningbo 315211, China;
b Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, College of Physics andMicroelectronic Science, Hunan University, Changsha 410082, China;
c Laboratory of Infrared Materials and Devices, Advanced Technology Research Institute, Ningbo University, Ningbo 315211, China

收稿日期:2014-10-17 修回日期:2014-12-04 出版日期:2015-06-05 发布日期:2015-06-05
基金资助:
Project supported by the National Key Basic Research Program of China (Grant No. 2012CB722703), the National Natural Science Foundation of China (Grant No. 61377061), the Young Leaders of Academic Climbing Project of the Education Department of Zhejiang Province, China (Grant No. pd2013092), the Program for Innovative Research Team of Ningbo City, China (Grant No. 2009B217), and the K. C. Wong Magna Fund in Ningbo University, China.

Linear and nonlinear optical properties of Sb-doped GeSe₂ thin films

Zhang Zhen-Ying (张振营)^a, Chen Fen (陈芬)^a, Lu Shun-Bin (陆顺斌)^b, Wang Yong-Hui (王永辉)^a, Shen Xiang (沈祥)^c, Dai Shi-Xun (戴世勋)^c, Nie Qiu-Hua (聂秋华)^c

a College of Information Science and Engineering, Ningbo University, Ningbo 315211, China;
b Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, College of Physics andMicroelectronic Science, Hunan University, Changsha 410082, China;
c Laboratory of Infrared Materials and Devices, Advanced Technology Research Institute, Ningbo University, Ningbo 315211, China

Received:2014-10-17 Revised:2014-12-04 Online:2015-06-05 Published:2015-06-05
Contact: Chen Fen E-mail:chenfen@nbu.edu.cn
About author:68.55.J-; 42.65.An; 74.25.Gz
Supported by:
Project supported by the National Key Basic Research Program of China (Grant No. 2012CB722703), the National Natural Science Foundation of China (Grant No. 61377061), the Young Leaders of Academic Climbing Project of the Education Department of Zhejiang Province, China (Grant No. pd2013092), the Program for Innovative Research Team of Ningbo City, China (Grant No. 2009B217), and the K. C. Wong Magna Fund in Ningbo University, China.

摘要/Abstract

摘要： Sb-doped GeSe₂ chalcogenide thin films are prepared by the magnetron co-sputtering method. The linear optical properties of as-deposited films are derived by analyzing transmission spectra. The refractive index rises and the optical band gap decreases from 2.08 eV to 1.41 eV with increasing the Sb content. X-ray photoelectron spectra further confirm the formation of a covalent Sb–Se bond. The third-order nonlinear optical properties of thin films are investigated under femtosecond laser excitation at 800 nm. The results show that the third-order nonlinear optical properties are enhanced with increasing the concentration of Sb. The nonlinear refraction indices of these thin films are measured to be on the order of 10^-18 m²/W with a positive sign and the nonlinear absorption coefficients are obtained to be on the order of 10^-10 m/W. These excellent properties indicate that Sb-doped Ge–Se films have a good prospect in the applications of nonlinear optical devices.

关键词: chalcogenides films, refractive index, optical band gap, nonlinear optical properties

Abstract: Sb-doped GeSe₂ chalcogenide thin films are prepared by the magnetron co-sputtering method. The linear optical properties of as-deposited films are derived by analyzing transmission spectra. The refractive index rises and the optical band gap decreases from 2.08 eV to 1.41 eV with increasing the Sb content. X-ray photoelectron spectra further confirm the formation of a covalent Sb–Se bond. The third-order nonlinear optical properties of thin films are investigated under femtosecond laser excitation at 800 nm. The results show that the third-order nonlinear optical properties are enhanced with increasing the concentration of Sb. The nonlinear refraction indices of these thin films are measured to be on the order of 10^-18 m²/W with a positive sign and the nonlinear absorption coefficients are obtained to be on the order of 10^-10 m/W. These excellent properties indicate that Sb-doped Ge–Se films have a good prospect in the applications of nonlinear optical devices.

Key words: chalcogenides films, refractive index, optical band gap, nonlinear optical properties

中图分类号: (Morphology of films)

68.55.J-

42.65.An (Optical susceptibility, hyperpolarizability) 74.25.Gz (Optical properties)

张振营, 陈芬, 陆顺斌, 王永辉, 沈祥, 戴世勋, 聂秋华. Linear and nonlinear optical properties of Sb-doped GeSe₂ thin films[J]. 中国物理B, 2015, 24(6): 66801-066801.

Zhang Zhen-Ying (张振营), Chen Fen (陈芬), Lu Shun-Bin (陆顺斌), Wang Yong-Hui (王永辉), Shen Xiang (沈祥), Dai Shi-Xun (戴世勋), Nie Qiu-Hua (聂秋华). Linear and nonlinear optical properties of Sb-doped GeSe₂ thin films[J]. Chin. Phys. B, 2015, 24(6): 66801-066801.

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Linear and nonlinear optical properties of Sb-doped GeSe₂ thin films

Linear and nonlinear optical properties of Sb-doped GeSe₂ thin films

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