A novel thin drift region device with field limiting rings in substrate

doi:10.1088/1674-1056/20/11/117202

中国物理B ›› 2011, Vol. 20 ›› Issue (11): 117202-117202.doi: 10.1088/1674-1056/20/11/117202

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

A novel thin drift region device with field limiting rings in substrate

李琦¹, 王卫东¹, 韦雪明¹, 朱金鸾²

(1)Guangxi Key Laboratory of Information and Communication, Guilin University of Electronic Technology, Guilin 541004, China; (2)Guilin Strong Micro Electronics Co., Ltd, Guilin 541004, China

收稿日期:2011-04-21 修回日期:2011-06-18 出版日期:2011-11-15 发布日期:2011-11-15
基金资助:
Project supported by the Guangxi Provincial Natural Science Foundation, China (Grant No. 2010GXNSFB013054) and the Guangxi Provincial Key Science and Technology Program, China (Grant No. 11107001-20).

A novel thin drift region device with field limiting rings in substrate

Li Qi(李琦)^a)^†, Zhu Jin-Luan(朱金鸾)^b),Wang Wei-Dong(王卫东)^a), and Wei Xue-Ming(韦雪明)^a)

^a Guangxi Key Laboratory of Information and Communication, Guilin University of Electronic Technology, Guilin 541004, China; ^b Guilin Strong Micro Electronics Co., Ltd, Guilin 541004, China

Received:2011-04-21 Revised:2011-06-18 Online:2011-11-15 Published:2011-11-15
Supported by:
Project supported by the Guangxi Provincial Natural Science Foundation, China (Grant No. 2010GXNSFB013054) and the Guangxi Provincial Key Science and Technology Program, China (Grant No. 11107001-20).

摘要/Abstract

摘要： A novel thin drift region device with heavily doped N⁺ rings embedded in the substrate is reported, which is called the field limiting rings in substrate lateral double-diffused MOS transistor (SFLR LDMOS). In the SFLR LDMOS, the peak of the electric field at the main junction is reduced due to the transfer of the voltage from the main junction to other field limiting ring junctions, so the vertical electric field is improved significantly. A model of the breakdown voltage is developed, from which optimal spacing is obtained. The numerical results indicate that the breakdown voltage of the device proposed is increased by 76% in comparison to that of the conventional LDMOS.

Abstract: A novel thin drift region device with heavily doped N⁺ rings embedded in the substrate is reported, which is called the field limiting rings in substrate lateral double-diffused MOS transistor (SFLR LDMOS). In the SFLR LDMOS, the peak of the electric field at the main junction is reduced due to the transfer of the voltage from the main junction to other field limiting ring junctions, so the vertical electric field is improved significantly. A model of the breakdown voltage is developed, from which optimal spacing is obtained. The numerical results indicate that the breakdown voltage of the device proposed is increased by 76% in comparison to that of the conventional LDMOS.

Key words: field limiting ring, reduced surface field, reduced bulk field, breakdown voltage

中图分类号: (Elemental semiconductors)

72.80.Cw

73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

李琦, 朱金鸾, 王卫东, 韦雪明. A novel thin drift region device with field limiting rings in substrate[J]. 中国物理B, 2011, 20(11): 117202-117202.

Li Qi(李琦), Zhu Jin-Luan(朱金鸾),Wang Wei-Dong(王卫东), and Wei Xue-Ming(韦雪明) . A novel thin drift region device with field limiting rings in substrate[J]. Chin. Phys. B, 2011, 20(11): 117202-117202.

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A novel thin drift region device with field limiting rings in substrate

A novel thin drift region device with field limiting rings in substrate

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