›› 2015, Vol. 24 ›› Issue (2): 27505-027505.doi: 10.1088/1674-1056/24/2/027505
• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇 下一篇
叶军a b, 何为b, 胡泊b, 汤进b, 张永圣b, 张向群b, 陈子瑜a, 成昭华b
Ye Jun (叶军)a b, He Wei (何为)b, Hu Bo (胡泊)b, Tang Jin (汤进)b, Zhang Yong-Sheng (张永圣)b, Zhang Xiang-Qun (张向群)b, Chen Zi-Yu (陈子瑜)a, Cheng Zhao-Hua (成昭华)b
摘要: A planar Hall effect (PHE) is introduced to investigate the magnetization reversal process in single-crystalline iron film grown on a Si (001) substrate. Owing to the domain structure of iron film and the characteristics of PHE, the magnetization switches sharply in an angular range of the external field for two steps of 90° domain wall displacement and one step of 180° domain wall displacement near the easy axis, respectively. However, the magnetization reversal process near the hard axis is completed by only one step of 90° domain wall displacement and then rotates coherently. The magnetization reversal process mechanism near the hard axis seems to be a combination of coherent rotation and domain wall displacement. Furthermore, the domain wall pinning energy and uniaxial magnetic anisotropy energy can also be derived from the PHE measurement.
中图分类号: (Magnetic properties of monolayers and thin films)