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Jingshu Guo(郭静姝), Jiejie Zhu(祝杰杰), Siyu Liu(刘思雨), Jielong Liu(刘捷龙), Jiahao Xu(徐佳豪), Weiwei Chen(陈伟伟), Yuwei Zhou(周雨威), Xu Zhao(赵旭), Minhan Mi(宓珉瀚), Mei Yang(杨眉), Xiaohua Ma(马晓华), and Yue Hao(郝跃). Low-resistance ohmic contacts on InAlN/GaN heterostructures with MOCVD-regrown n+-InGaN and mask-free regrowth process[J]. 中国物理B, 2023, 32(3): 37303-037303. |
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Chaoxin Huang(黄潮欣), Benyuan Cheng(程本源), Yunwei Zhang(张云蔚), Long Jiang(姜隆), Lisi Li(李历斯), Mengwu Huo(霍梦五), Hui Liu(刘晖), Xing Huang(黄星), Feixiang Liang(梁飞翔), Lan Chen(陈岚), Hualei Sun(孙华蕾), and Meng Wang(王猛). Crystal and electronic structure of a quasi-two-dimensional semiconductor Mg3Si2Te6[J]. 中国物理B, 2023, 32(3): 37802-037802. |
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Chen Wang(王琛), Wenmo Lu(路文墨), Fengnan Li(李奉南), Qiaomei Luo(罗巧梅), and Fei Ma(马飞)†. Migration of weakly bonded oxygen atoms in a-IGZO thin films and the positive shift of threshold voltage in TFTs[J]. 中国物理B, 2022, 31(9): 96101-096101. |
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Xiaotao Hu(胡小涛), Yimeng Song(宋祎萌), Zhaole Su(苏兆乐), Haiqiang Jia(贾海强), Wenxin Wang(王文新), Yang Jiang(江洋), Yangfeng Li(李阳锋), and Hong Chen(陈弘). Characterization of the N-polar GaN film grown on C-plane sapphire and misoriented C-plane sapphire substrates by MOCVD[J]. 中国物理B, 2022, 31(3): 38103-038103. |
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Zhenzhen Wang(王珍珍), Weiheng Qi(戚炜恒), Jiachang Bi(毕佳畅), Xinyan Li(李欣岩), Yu Chen(陈雨), Fang Yang(杨芳), Yanwei Cao(曹彦伟), Lin Gu(谷林), Qinghua Zhang(张庆华), Huanhua Wang(王焕华), Jiandi Zhang(张坚地), Jiandong Guo(郭建东), and Xiaoran Liu(刘笑然). Anomalous strain effect in heteroepitaxial SrRuO3 films on (111) SrTiO3 substrates[J]. 中国物理B, 2022, 31(12): 126801-126801. |
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Hong-Lin Zhou(周宏霖), Yu-Hao Zhang(张与豪), Yang Li(李阳), Shi-Liang Li(李世亮), Wen-Shan Hong(洪文山), and Hui-Qian Luo(罗会仟). Growth and characterization of superconducting Ca1-xNaxFe2As2 single crystals by NaAs-flux method[J]. 中国物理B, 2022, 31(11): 117401-117401. |
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Heng-An Zhou(周恒安), Li Cai(蔡立), Teng Xu(许腾), Yonggang Zhao(赵永刚), and Wanjun Jiang(江万军). Optimized growth of compensated ferrimagnetic insulator Gd3Fe5O12 with a perpendicular magnetic anisotropy[J]. 中国物理B, 2021, 30(9): 97503-097503. |
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Wan-Liang Liu(刘万良), Ying Chen(陈莹), Tao Li(李涛), Zhi-Tang Song(宋志棠), and Liang-Cai Wu(吴良才). Effect of Mo doping on phase change performance of Sb2Te3[J]. 中国物理B, 2021, 30(8): 86801-086801. |
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Hussein T. Salloom, Rushdi I. Jasim, Nadir Fadhil Habubi, Sami Salman Chiad, M Jadan, and Jihad S. Addasi. Gas sensor using gold doped copper oxide nanostructured thin films as modified cladding fiber[J]. 中国物理B, 2021, 30(6): 68505-068505. |
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Yu-Song Zhi(支钰崧), Wei-Yu Jiang(江为宇), Zeng Liu(刘增), Yuan-Yuan Liu(刘媛媛), Xu-Long Chu(褚旭龙), Jia-Hang Liu(刘佳航), Shan Li(李山), Zu-Yong Yan(晏祖勇), Yue-Hui Wang(王月晖), Pei-Gang Li(李培刚), Zhen-Ping Wu(吴真平), and Wei-Hua Tang(唐为华). High-responsivity solar-blind photodetector based on MOCVD-grown Si-doped β-Ga2O3 thin film[J]. 中国物理B, 2021, 30(5): 57301-057301. |
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Hao OuYang(欧阳豪), Qing-Xin Dong(董庆新), Yi-Fei Huang(黄奕飞), Jun-Sen Xiang(项俊森), Li-Bo Zhang(张黎博), Chen-Sheng Li(李晨圣), Pei-Jie Sun(孙培杰), Zhi-An Ren(任治安), and Gen-Fu Chen(陈根富). Electric and thermal transport properties of topological insulator candidate LiMgBi[J]. 中国物理B, 2021, 30(12): 127101-127101. |
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Jun Pang(庞军), Xi Zhang(张析), Limeng Shen(申笠蒙), Jiayin Xu(徐家胤), Ya Nie(聂娅), and Gang Xiang(向钢). Synthesis and thermoelectric properties of Bi-doped SnSe thin films[J]. 中国物理B, 2021, 30(11): 116302-116302. |
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Jie Tian(田杰), Xiao Cao(曹笑), Wudi Wang(王无敌), Jian Liu(刘坚), Jianshu Dong(董建树), Donghua Hu(胡冬华), Qingguo Wang(王庆国), Yanyan Xue(薛艳艳), Xiaodong Xu(徐晓东), and Jun Xu(徐军). Crystal growth, spectral properties and Judd-Ofelt analysis of Pr: CaF2-YF3[J]. 中国物理B, 2021, 30(10): 108101-108101. |
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Bin Liu(刘斌) and Hong Zhou(周洪). Scalable fabrication of Bi2O2Se polycrystalline thin film for near-infrared optoelectronic devices applications[J]. 中国物理B, 2021, 30(10): 106803-106803. |
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Ateyyah M Al-Baradi, Fatimah A Altowairqi, A A Atta, Ali Badawi, Saud A Algarni, Abdulraheem S A Almalki, A M Hassanien, A Alodhayb, A M Kamal, M M El-Nahass. Structural and optical characteristic features of RF sputtered CdS/ZnO thin films[J]. 中国物理B, 2020, 29(8): 80702-080702. |