High-crystalline GaSb epitaxial films grown on GaAs(001) substrates by low-pressure metal-organic chemical vapor deposition

doi:10.1088/1674-1056/24/1/018102

中国物理B ›› 2015, Vol. 24 ›› Issue (1): 18102-018102.doi: 10.1088/1674-1056/24/1/018102

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High-crystalline GaSb epitaxial films grown on GaAs(001) substrates by low-pressure metal-organic chemical vapor deposition

王连锴, 刘仁俊, 吕游, 杨皓宇, 李国兴, 张源涛, 张宝林

State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Changchun 130012, China

收稿日期:2014-09-11 修回日期:2014-09-19 出版日期:2015-01-05 发布日期:2015-01-05
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 61076010) and the International Science and Technology Cooperation Program of Science and Technology Bureau of Changchun, China (Grant No. 12ZX68).

High-crystalline GaSb epitaxial films grown on GaAs(001) substrates by low-pressure metal-organic chemical vapor deposition

Wang Lian-Kai (王连锴), Liu Ren-Jun (刘仁俊), Lü You (吕游), Yang Hao-Yu (杨皓宇), Li Guo-Xing (李国兴), Zhang Yuan-Tao (张源涛), Zhang Bao-Lin (张宝林)

State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Changchun 130012, China

Received:2014-09-11 Revised:2014-09-19 Online:2015-01-05 Published:2015-01-05
Contact: Zhang Yuan-Tao, Zhang Bao-Lin E-mail:zhangyt@jlu.edu.cn;zbl@jlu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 61076010) and the International Science and Technology Cooperation Program of Science and Technology Bureau of Changchun, China (Grant No. 12ZX68).

摘要/Abstract

摘要：

Orthogonal experiments of GaSb films growth on GaAs(001) substrates have been designed and performed by using a low-pressure metal-organic chemical vapor deposition (LP-MOCVD) system. The crystallinities and microstructures of the produced films were comparatively analyzed to achieve the optimum growth parameters. It was demonstrated that the optimized GaSb thin film has a narrow full width at half maximum (358 arc sec) of the (004) ω-rocking curve, and a smooth surface with a low root-mean-square roughness of about 6 nm, which is typical in the case of the heteroepitaxial single-crystal films. In addition, we studied the effects of layer thickness of GaSb thin film on the density of dislocations by Raman spectra. It is believed that our research can provide valuable information for the fabrication of high-crystalline GaSb films and can promote the integration probability of mid-infrared devices fabricated on mainstream performance electronic devices.

关键词: crystal growth, metal-organic chemical vapor deposition, thin films

Abstract:

Key words: crystal growth, metal-organic chemical vapor deposition, thin films

中图分类号: (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))

81.15.Gh

81.15.Kk (Vapor phase epitaxy; growth from vapor phase) 81.05.Ea (III-V semiconductors) 81.10.Aj (Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)

王连锴, 刘仁俊, 吕游, 杨皓宇, 李国兴, 张源涛, 张宝林. High-crystalline GaSb epitaxial films grown on GaAs(001) substrates by low-pressure metal-organic chemical vapor deposition[J]. 中国物理B, 2015, 24(1): 18102-018102.

Wang Lian-Kai (王连锴), Liu Ren-Jun (刘仁俊), Lü You (吕游), Yang Hao-Yu (杨皓宇), Li Guo-Xing (李国兴), Zhang Yuan-Tao (张源涛), Zhang Bao-Lin (张宝林). High-crystalline GaSb epitaxial films grown on GaAs(001) substrates by low-pressure metal-organic chemical vapor deposition[J]. Chin. Phys. B, 2015, 24(1): 18102-018102.

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High-crystalline GaSb epitaxial films grown on GaAs(001) substrates by low-pressure metal-organic chemical vapor deposition

High-crystalline GaSb epitaxial films grown on GaAs(001) substrates by low-pressure metal-organic chemical vapor deposition

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