›› 2014, Vol. 23 ›› Issue (12): 120308-120308.doi: 10.1088/1674-1056/23/12/120308

• GENERAL • 上一篇    下一篇

Afterpulsing characteristics of InGaAs/InP single photon avalanche diodes

马海强, 杨建会, 韦克金, 李瑞雪, 朱武   

  1. School of Science and State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
  • 收稿日期:2014-06-28 修回日期:2014-09-18 出版日期:2014-12-15 发布日期:2014-12-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 61178010), the Fundamental Research Funds for the Central Universities, China (Grant No. bupt 2014TS01), the Fund of State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, China (Grant No. 201318), and the National Program for Basic Research of China (Grant No. 2010CB923202).

Afterpulsing characteristics of InGaAs/InP single photon avalanche diodes

Ma Hai-Qiang (马海强), Yang Jian-Hui (杨建会), Wei Ke-Jin (韦克金), Li Rui-Xue (李瑞雪), Zhu Wu (朱武)   

  1. School of Science and State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
  • Received:2014-06-28 Revised:2014-09-18 Online:2014-12-15 Published:2014-12-15
  • Contact: Ma Hai-Qiang E-mail:hqma@bupt.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 61178010), the Fundamental Research Funds for the Central Universities, China (Grant No. bupt 2014TS01), the Fund of State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, China (Grant No. 201318), and the National Program for Basic Research of China (Grant No. 2010CB923202).

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摘要： InGaAs/InP single photon avalanche diodes (SPADs) are more and more available in many research fields. They are affected by afterpulsing which leads to a poor single photon detection probability. We present an InGaAs/InP avalanche photodiode with an active quenching circuit on an application specific integrated circuit (ASIC). It can quench the avalanche rapidly and then reduce the afterpulse rate. Also this quenching circuit can operate in both free-running and gated modes. Furthermore, a new technique is introduced to characterize the influence of the higher order of afterpulses, which uses a program running on a field programmable gate array (FPGA) integrated circuit.

关键词: single photon detection, active quenching, afterpulse, quantum key distribution

Abstract: InGaAs/InP single photon avalanche diodes (SPADs) are more and more available in many research fields. They are affected by afterpulsing which leads to a poor single photon detection probability. We present an InGaAs/InP avalanche photodiode with an active quenching circuit on an application specific integrated circuit (ASIC). It can quench the avalanche rapidly and then reduce the afterpulse rate. Also this quenching circuit can operate in both free-running and gated modes. Furthermore, a new technique is introduced to characterize the influence of the higher order of afterpulses, which uses a program running on a field programmable gate array (FPGA) integrated circuit.

Key words: single photon detection, active quenching, afterpulse, quantum key distribution

中图分类号:  (Quantum cryptography and communication security)

  • 03.67.Dd
03.67.Hk (Quantum communication) 03.67.-a (Quantum information)