中国物理B ›› 2014, Vol. 23 ›› Issue (9): 94206-094206.doi: 10.1088/1674-1056/23/9/094206

• ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS • 上一篇    下一篇

Compression of the self-Q-switching in semiconductor disk lasers with single-layer graphene saturable absorbers

于振华, 田金荣, 宋晏蓉   

  1. Institute of Information Photonics Technology and College of Applied Sciences, Beijing University of Technology, Beijing 100124, China
  • 收稿日期:2014-03-26 修回日期:2014-04-28 出版日期:2014-09-15 发布日期:2014-09-15
  • 基金资助:
    Project supported by the National Basic Research Program of China (Grant No. 2013CB922404), the National Natural Science Foundation of China (Grant No. 61177047), and the Key Project of the National Natural Science Foundation of China (Grant No. 61235010).

Compression of the self-Q-switching in semiconductor disk lasers with single-layer graphene saturable absorbers

Yu Zhen-Hua (于振华), Tian Jin-Rong (田金荣), Song Yan-Rong (宋晏蓉)   

  1. Institute of Information Photonics Technology and College of Applied Sciences, Beijing University of Technology, Beijing 100124, China
  • Received:2014-03-26 Revised:2014-04-28 Online:2014-09-15 Published:2014-09-15
  • Contact: Song Yan-Rong E-mail:yrsong@bjut.edu.cn
  • Supported by:
    Project supported by the National Basic Research Program of China (Grant No. 2013CB922404), the National Natural Science Foundation of China (Grant No. 61177047), and the Key Project of the National Natural Science Foundation of China (Grant No. 61235010).

PDF (PC)

83619

赞

摘要： We demonstrate the first use of single layer graphene for compressing self-Q-switching pulses in semiconductor disk lasers. The gain region of the semiconductor disk laser used InGaAs quantum wells with a central wavelength of 1030 nm. Due to self saturable absorption of the quantum wells, the disk laser emitted at the self-Q-switching state with a pulse width of 13 μs. By introducing the single layer graphene as a saturable absorber into the V-shaped laser cavity, the pulse width of the self-pulse was compressed to 2 μs with a lower pump power of 300 mW. As the pump power was increased, multiple pulses with the pulse width of 1.8 μs appeared. The compression factor was about 7.2.

关键词: semiconductor disk laser, graphene, compression

Abstract: We demonstrate the first use of single layer graphene for compressing self-Q-switching pulses in semiconductor disk lasers. The gain region of the semiconductor disk laser used InGaAs quantum wells with a central wavelength of 1030 nm. Due to self saturable absorption of the quantum wells, the disk laser emitted at the self-Q-switching state with a pulse width of 13 μs. By introducing the single layer graphene as a saturable absorber into the V-shaped laser cavity, the pulse width of the self-pulse was compressed to 2 μs with a lower pump power of 300 mW. As the pump power was increased, multiple pulses with the pulse width of 1.8 μs appeared. The compression factor was about 7.2.

Key words: semiconductor disk laser, graphene, compression

中图分类号:  (Semiconductor lasers; laser diodes)

  • 42.55.Px
81.05.ue (Graphene)