Structural properties of a-SiOx：H films studied by an improved infrared-transmission analysis method

doi:10.1088/1674-1056/23/9/098801

›› 2014, Vol. 23 ›› Issue (9): 98801-098801.doi: 10.1088/1674-1056/23/9/098801

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Structural properties of a-SiO_x：H films studied by an improved infrared-transmission analysis method

王烁, 张晓丹, 熊绍珍, 赵颖

Institute of Photo-electronic Thin Film Device and Technique, Nankai University, Tianjin 300071, China

收稿日期:2014-02-05 修回日期:2014-04-18 出版日期:2014-09-15 发布日期:2014-09-15
基金资助:
Project supported by the National Basic Research Program of China (Grant Nos. 2011CBA00705, 2011CBA00706, and 2011CBA00707), the National Natural Science Foundation of China (Grant No. 60976051), and the Program for New Century Excellent Talents in University of China (Grant No. NCET-08-0295).

Structural properties of a-SiO_x：H films studied by an improved infrared-transmission analysis method

Wang Shuo (王烁), Zhang Xiao-Dan (张晓丹), Xiong Shao-Zhen (熊绍珍), Zhao Ying (赵颖)

Institute of Photo-electronic Thin Film Device and Technique, Nankai University, Tianjin 300071, China

Received:2014-02-05 Revised:2014-04-18 Online:2014-09-15 Published:2014-09-15
Contact: Zhao Ying E-mail:zhaoygds@nankai.edu.cn
Supported by:
Project supported by the National Basic Research Program of China (Grant Nos. 2011CBA00705, 2011CBA00706, and 2011CBA00707), the National Natural Science Foundation of China (Grant No. 60976051), and the Program for New Century Excellent Talents in University of China (Grant No. NCET-08-0295).

摘要/Abstract

摘要： An improved method of fitting point-by-point is proposed to determine the absorption coefficient from infrared (IR) transmittance. With no necessity of empirical correction factors, the absorption coefficient can be accurately determined for the films with thin thicknesses. Based on this method, the structural properties of the hydrogenated amorphous silicon oxide materials (a-SiO_x:H) are investigated. The oxygen-concentration-dependent variation of the Si-O-Si and the Si-H related modes in a-SiO_x:H materials is discussed in detail.

关键词: amorphous silicon oxide film, thin thickness, infrared transmission, structural properties

Abstract: An improved method of fitting point-by-point is proposed to determine the absorption coefficient from infrared (IR) transmittance. With no necessity of empirical correction factors, the absorption coefficient can be accurately determined for the films with thin thicknesses. Based on this method, the structural properties of the hydrogenated amorphous silicon oxide materials (a-SiO_x:H) are investigated. The oxygen-concentration-dependent variation of the Si-O-Si and the Si-H related modes in a-SiO_x:H materials is discussed in detail.

Key words: amorphous silicon oxide film, thin thickness, infrared transmission, structural properties

中图分类号: (Solar cells (photovoltaics))

88.40.H-

78.30.-j (Infrared and Raman spectra) 78.20.Bh (Theory, models, and numerical simulation)

王烁, 张晓丹, 熊绍珍, 赵颖. Structural properties of a-SiO_x：H films studied by an improved infrared-transmission analysis method[J]. , 2014, 23(9): 98801-098801.

Wang Shuo (王烁), Zhang Xiao-Dan (张晓丹), Xiong Shao-Zhen (熊绍珍), Zhao Ying (赵颖). Structural properties of a-SiO_x：H films studied by an improved infrared-transmission analysis method[J]. Chin. Phys. B, 2014, 23(9): 98801-098801.

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Structural properties of a-SiO_x：H films studied by an improved infrared-transmission analysis method

Structural properties of a-SiO_x：H films studied by an improved infrared-transmission analysis method

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