中国物理B ›› 2014, Vol. 23 ›› Issue (6): 66103-066103.doi: 10.1088/1674-1056/23/6/066103

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Retarded thermal oxidation of strained Si substrate

孙家宝a, 唐晓雨a, 杨周伟a, 施毅a, 赵毅a b   

  1. a School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
    b State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China
  • 收稿日期:2013-10-19 修回日期:2013-12-25 出版日期:2014-06-15 发布日期:2014-06-15
  • 基金资助:
    Project supported by the National Key Basic Research Project of China (Grant No. 2011CBA00607), the National Natural Science Foundation of China (Grant Nos. 61106089 and 61376097), and the Program B for Outstanding Ph. D. Candidate of Nanjing University, China (Grant No. 201301B005).

Retarded thermal oxidation of strained Si substrate

Sun Jia-Bao (孙家宝)a, Tang Xiao-Yu (唐晓雨)a, Yang Zhou-Wei (杨周伟)a, Shi Yi (施毅)a, Zhao Yi (赵毅)a b   

  1. a School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
    b State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China
  • Received:2013-10-19 Revised:2013-12-25 Online:2014-06-15 Published:2014-06-15
  • Contact: Zhao Yi E-mail:yzhao@nju.edu.cn
  • Supported by:
    Project supported by the National Key Basic Research Project of China (Grant No. 2011CBA00607), the National Natural Science Foundation of China (Grant Nos. 61106089 and 61376097), and the Program B for Outstanding Ph. D. Candidate of Nanjing University, China (Grant No. 201301B005).

PDF (PC)

420

赞

摘要： Strained Si is recognized as a necessary technology booster for modern integrated circuit technology. However, the thermal oxidation behaviors of strained Si substrates are not well understood yet despite their importance. In this study, we for the first time experimentally find that all types of strained Si substrates (uniaxial tensile, uniaxial compressive, biaxial tensile, and biaxial compressive) show smaller thermal oxidation rates than an unstrained Si substrate. The possible mechanisms for these retarded thermal oxidation rates in strained Si substrates are also discussed.

关键词: strained Si, uniaxial and biaxial, tensile and compressive stresses, thermal oxidation rates

Abstract: Strained Si is recognized as a necessary technology booster for modern integrated circuit technology. However, the thermal oxidation behaviors of strained Si substrates are not well understood yet despite their importance. In this study, we for the first time experimentally find that all types of strained Si substrates (uniaxial tensile, uniaxial compressive, biaxial tensile, and biaxial compressive) show smaller thermal oxidation rates than an unstrained Si substrate. The possible mechanisms for these retarded thermal oxidation rates in strained Si substrates are also discussed.

Key words: strained Si, uniaxial and biaxial, tensile and compressive stresses, thermal oxidation rates

中图分类号:  (Ge and Si)

  • 61.72.uf
73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator)) 81.16.Pr (Micro- and nano-oxidation) 77.80.bn (Strain and interface effects)