中国物理B ›› 2014, Vol. 23 ›› Issue (3): 38503-038503.doi: 10.1088/1674-1056/23/3/038503

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Low on-resistance high-voltage lateral double-diffused metal oxide semiconductor with a buried improved super-junction layer

伍伟, 张波, 罗小蓉, 方健, 李肇基   

  1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
  • 收稿日期:2013-05-23 修回日期:2013-08-06 出版日期:2014-03-15 发布日期:2014-03-15
  • 基金资助:
    Project supported by the National Science and Technology Project of the Ministry of Science and Technology of China (Grant No. 2010ZX02201), the National Natural Science Foundation of China (Grant No. 61176069), and the National Defense Pre-Research of China (Grant No. 51308020304).

Low on-resistance high-voltage lateral double-diffused metal oxide semiconductor with a buried improved super-junction layer

Wu Wei (伍伟), Zhang Bo (张波), Luo Xiao-Rong (罗小蓉), Fang Jian (方健), Li Zhao-Ji (李肇基)   

  1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
  • Received:2013-05-23 Revised:2013-08-06 Online:2014-03-15 Published:2014-03-15
  • Contact: Wu Wei E-mail:wuweiwwu@163.com
  • Supported by:
    Project supported by the National Science and Technology Project of the Ministry of Science and Technology of China (Grant No. 2010ZX02201), the National Natural Science Foundation of China (Grant No. 61176069), and the National Defense Pre-Research of China (Grant No. 51308020304).

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摘要： A novel low specific on-resistance (Ron,sp) lateral double-diffused metal oxide semiconductor (LDMOS) with a buried improved super-junction (BISJ) layer is proposed. A super-junction layer is buried in the drift region and the P pillar is split into two parts with different doping concentrations. Firstly, the buried super-junction layer causes the multiple-direction assisted depletion effect. The drift region doping concentration of the BISJ LDMOS is therefore much higher than that of the conventional LDMOS. Secondly, the buried super-junction layer provides a bulk low on-resistance path. Both of them reduce Ron,sp greatly. Thirdly, the electric field modulation effect of the new electric field peak introduced by the step doped P pillar improves the breakdown voltage (BV). The BISJ LDMOS exhibits a BV of 300 V and Ron,sp of 8.08 mΩ·cm2 which increases BV by 35% and reduces Ron,sp by 60% compared with those of a conventional LDMOS with a drift length of 15 μm, respectively.

关键词: multiple-direction assisted depletion effect, breakdown voltage (BV), electric field modulation, lateral double-diffusion MOSFET (LDMOS)

Abstract: A novel low specific on-resistance (Ron,sp) lateral double-diffused metal oxide semiconductor (LDMOS) with a buried improved super-junction (BISJ) layer is proposed. A super-junction layer is buried in the drift region and the P pillar is split into two parts with different doping concentrations. Firstly, the buried super-junction layer causes the multiple-direction assisted depletion effect. The drift region doping concentration of the BISJ LDMOS is therefore much higher than that of the conventional LDMOS. Secondly, the buried super-junction layer provides a bulk low on-resistance path. Both of them reduce Ron,sp greatly. Thirdly, the electric field modulation effect of the new electric field peak introduced by the step doped P pillar improves the breakdown voltage (BV). The BISJ LDMOS exhibits a BV of 300 V and Ron,sp of 8.08 mΩ·cm2 which increases BV by 35% and reduces Ron,sp by 60% compared with those of a conventional LDMOS with a drift length of 15 μm, respectively.

Key words: multiple-direction assisted depletion effect, breakdown voltage (BV), electric field modulation, lateral double-diffusion MOSFET (LDMOS)

中图分类号:  (Semiconductor-device characterization, design, and modeling)

  • 85.30.De
85.30.Tv (Field effect devices) 84.70.+p (High-current and high-voltage technology: power systems; power transmission lines and cables)