Low on-resistance high-voltage lateral double-diffused metal oxide semiconductor with a buried improved super-junction layer
伍伟, 张波, 罗小蓉, 方健, 李肇基
Low on-resistance high-voltage lateral double-diffused metal oxide semiconductor with a buried improved super-junction layer
Wu Wei (伍伟), Zhang Bo (张波), Luo Xiao-Rong (罗小蓉), Fang Jian (方健), Li Zhao-Ji (李肇基)
中国物理B . 2014, (3): 38503 -038503 .  DOI: 10.1088/1674-1056/23/3/038503