中国物理B ›› 2014, Vol. 23 ›› Issue (3): 38503-038503.doi: 10.1088/1674-1056/23/3/038503
• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇 下一篇
伍伟, 张波, 罗小蓉, 方健, 李肇基
Wu Wei (伍伟), Zhang Bo (张波), Luo Xiao-Rong (罗小蓉), Fang Jian (方健), Li Zhao-Ji (李肇基)
摘要: A novel low specific on-resistance (Ron,sp) lateral double-diffused metal oxide semiconductor (LDMOS) with a buried improved super-junction (BISJ) layer is proposed. A super-junction layer is buried in the drift region and the P pillar is split into two parts with different doping concentrations. Firstly, the buried super-junction layer causes the multiple-direction assisted depletion effect. The drift region doping concentration of the BISJ LDMOS is therefore much higher than that of the conventional LDMOS. Secondly, the buried super-junction layer provides a bulk low on-resistance path. Both of them reduce Ron,sp greatly. Thirdly, the electric field modulation effect of the new electric field peak introduced by the step doped P pillar improves the breakdown voltage (BV). The BISJ LDMOS exhibits a BV of 300 V and Ron,sp of 8.08 mΩ·cm2 which increases BV by 35% and reduces Ron,sp by 60% compared with those of a conventional LDMOS with a drift length of 15 μm, respectively.
中图分类号: (Semiconductor-device characterization, design, and modeling)