Electrical and dielectric properties of Al/p-Si and Al/perylene/p-Si type diodes in a wide frequency range

doi:10.1088/1674-1056/23/1/018506

中国物理B ›› 2014, Vol. 23 ›› Issue (1): 18506-018506.doi: 10.1088/1674-1056/23/1/018506

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Electrical and dielectric properties of Al/p-Si and Al/perylene/p-Si type diodes in a wide frequency range

Ahmet Kaya^a, Sedat Zeyrek^b, Sait Eren San^c, Şmsettin Altindal^d

a Opticianry Department, Vocational School of Medical Sciences, Turgut Ozal University, Ankara 06370, Turkey;
b Physics Department, Faculty Sciences, Dumlupinar University, Kütahya 43000, Turkey;
c Physics Department, Gebze Institute of Technology, Kocaeli 41400, Turkey;
d Physics Department, Faculty of Sciences, Gazi University, Ankara 06500, Turkey

收稿日期:2013-03-31 修回日期:2013-06-08 出版日期:2013-11-12 发布日期:2013-11-12

Electrical and dielectric properties of Al/p-Si and Al/perylene/p-Si type diodes in a wide frequency range

Ahmet Kaya^a, Sedat Zeyrek^b, Sait Eren San^c, ?msettin Altindal^d

a Opticianry Department, Vocational School of Medical Sciences, Turgut Ozal University, Ankara 06370, Turkey;
b Physics Department, Faculty Sciences, Dumlupinar University, Kütahya 43000, Turkey;
c Physics Department, Gebze Institute of Technology, Kocaeli 41400, Turkey;
d Physics Department, Faculty of Sciences, Gazi University, Ankara 06500, Turkey

Received:2013-03-31 Revised:2013-06-08 Online:2013-11-12 Published:2013-11-12
Contact: Ahmet Kaya E-mail:akaya@turgutozal.edu.tr

摘要/Abstract

摘要： The perylene (C₂₀H₁₂) layer effect on the electrical and dielectric properties of Al/p-Si (MS) and Al/perylene/p-Si (MPS) diodes have been investigated and compared in the frequency range of 0.7 kHz–2 MHz. Experimental results show that C–V characteristics give an anomalous peak for two structures at low frequencies due to interface states (N_ss) and series resistance (R_s). The increases in C and G/ω at low frequencies confirm that the charges at interface can easily follow an ac signal and yield excess capacitance and conductance. The frequency-dependent dielectric constant (ε’) and dielectric loss (ε") are subtracted using C and G/ω data at 1.5 V. The ε’ and ε" values are found to be strongly dependent on frequency and voltage, and their large values at low frequencies can be attributed to the excess polarization coming from charges at traps. Plots of ln(σ _ac)–ln(ω) for two structures have two linear regions, with slopes of 0.369 and 1.166 for MS, and of 0.077 and 1.061 for MPS, respectively. From the C^-2–V characteristics, the doping acceptor atom concentration (N_A) and barrier height (Φ_B) for Schottky barrier diodes (SBDs) of MS and MPS types are also obtained to be 1.484×10^15 and 1.303×10¹⁵ cm^-3, and 1.10 and 1.13 eV, respectively.

关键词: organic–, inorganic based Schottky diodes, perylene (C₂₀H₁₂) interfacial layer, electrical and dielectric properties, frequency and voltage dependence

Abstract: The perylene (C₂₀H₁₂) layer effect on the electrical and dielectric properties of Al/p-Si (MS) and Al/perylene/p-Si (MPS) diodes have been investigated and compared in the frequency range of 0.7 kHz–2 MHz. Experimental results show that C–V characteristics give an anomalous peak for two structures at low frequencies due to interface states (N_ss) and series resistance (R_s). The increases in C and G/ω at low frequencies confirm that the charges at interface can easily follow an ac signal and yield excess capacitance and conductance. The frequency-dependent dielectric constant (ε’) and dielectric loss (ε") are subtracted using C and G/ω data at 1.5 V. The ε’ and ε" values are found to be strongly dependent on frequency and voltage, and their large values at low frequencies can be attributed to the excess polarization coming from charges at traps. Plots of ln(σ _ac)–ln(ω) for two structures have two linear regions, with slopes of 0.369 and 1.166 for MS, and of 0.077 and 1.061 for MPS, respectively. From the C^-2–V characteristics, the doping acceptor atom concentration (N_A) and barrier height (Φ_B) for Schottky barrier diodes (SBDs) of MS and MPS types are also obtained to be 1.484×10¹⁵ and 1.303×10¹⁵ cm^-3, and 1.10 and 1.13 eV, respectively.

Key words: organic–, inorganic based Schottky diodes, perylene (C₂₀H₁₂) interfacial layer, electrical and dielectric properties, frequency and voltage dependence

中图分类号: (Surface barrier, boundary, and point contact devices)

85.30.Hi

85.30.Kk (Junction diodes) 73.61.Ey (III-V semiconductors) 77.84.Jd (Polymers; organic compounds)

Ahmet Kaya, Sedat Zeyrek, Sait Eren San, Şmsettin Altindal. Electrical and dielectric properties of Al/p-Si and Al/perylene/p-Si type diodes in a wide frequency range[J]. 中国物理B, 2014, 23(1): 18506-018506.

Ahmet Kaya, Sedat Zeyrek, Sait Eren San, Şmsettin Altindal. Electrical and dielectric properties of Al/p-Si and Al/perylene/p-Si type diodes in a wide frequency range[J]. Chin. Phys. B, 2014, 23(1): 18506-018506.

参考文献 43

[1]	Tataroğlu A and Altindal S 2008 Microelectron. Eng. 85 1866
[2]	Bülbül M M 2007 Microelectron. Eng. 84 124
[3]	Pakma O, Serin N, Serin T and Altindal S 2008 J. Phys. D: Appl. Phys. 41 215103
[4]	Bengi A, Aydemir U, Altindal Ş, Özen Y and Özçelik S 2010 J. Alloy. Compd. 505 628
[5]	Pakma O 2012 Inter. J. Photoen. 2012 1
[6]	Tunç T, Uslu İ, Dökme İ, Altindal Ş and Uslu H 2010 Int. J. Polymer. Mater. 59 739
[7]	Uslu H, Altindal Ş and Tunç T 2011 J. Appl. Poly. Sci. 120 322
[8]	Asir S, Demir A S and Icil H 2010 Dyes Pigm. 84 1
[9]	Arslan E, Bütün S, Şafak Y and Özbay E 2010 J. Electron. Mat. 39 2681
[10]	Nicollian E H and Brews J R 1982 Metal Oxide Semiconductor: Physics and Technology (New York: John Wiley & Sons)
[11]	Noor Mohammad S, Fan Z F, Botchkarev A E, Kim W, Aktas O, Markoç H, Shiwei F, Jones K A and Derenge M A 2001 Philos. Mag. B 81 453
[12]	El Kamel F, Gonon P, Jomni F and Yangui B 2008 Appl. Phys. Lett. 93 042904
[13]	Altindal Ş, Sari B, Ünal Hİ and Yavaş N 2009 J. Appl. Poly. Sci. 113 2955
[14]	Omura I, Ohashi H and Fichtner W 1997 IEEE Electron Dev. Lett. 18 622
[15]	Tataroglu A, Altindal Ş and Bülbül M M 2005 Microelectron. Eng. 81 140
[16]	Kampen T U, Park S and Zahn D R T 2002 Appl. Surf. Sci. 190 461
[17]	Aydin M E, Soylu M, Yakuphanoğlu F and Farooq W A 2011 Microelectron. Eng. 88 867
[18]	Arslan E, Ş afak Y, Taşcçoğlu İ, Uslu H and Özbay E 2010 Microelectron. Eng. 87 1997
[19]	Altindal Ş and Uslu H 2011 J. Appl. Phys. 109 074503
[20]	Lee B H, Jeon Y, Zawadzki K, Qi W J and Lee J C 1999 Appl. Phys. Lett. 74 3143
[21]	Yücedağ İ 2009 Optoelectron. Adv. Mater. 3 612
[22]	Kaya A, Altindal Ş, Asar Y Ş and Sönmez Z 2013 Chin. Phys. Lett. 30 017301
[23]	Tataroğlu A and Altindal S 2009 J. Alloy. Compd. 484 405
[24]	Yerişkin S A, Ünal Hİ and Sari B 2011 J. Appl. Poly. Sci. 120 390
[25]	Afandiyevaİ M, Dökme İ, Altindal Ş, Bülbül M M and Tataroğlu A 2008 Microelectron. Eng. 85 247
[26]	Altindal Ş, Asar Y Ş, Kaya A and Sönmez Z 2012 J. Optoelectron. Adv. Mater. 14 998
[27]	Norde H 1979 J. Appl. Phys. 50 5052
[28]	Ocak Y S, Kulakci M, Kilicoglu T, Turan R and Akkilic K 2009 Synth. Met. 159 1603
[29]	Macedo P B, Moynihan C T and Bose R 1972 Phys. Chen. Glasses 13 171
[30]	Uslu H, Altindal Ş, Polat İ, Bayrak H and Bacaksiz E 2011 J. Alloy. Compd. 509 5555
[31]	Pissis P and Kyritsis A 1997 Solid State Ionics 97 105
[32]	Tataroğlu A, Altindal Ş and Bülbül M M 2005 Microelectron. Eng. 81 140
[33]	Ma X G, Gong Y B and Qu Z J 2009 Chin. Phys. B 18 1451
[34]	Ma X G and Sun W G 2005 Chin. Phys. 14 1792
[35]	Ding S J, Wang P F, Zhang W, Wang J T, Zhang Y W, Xia Z F and Wei W W 2000 Chin. Phys. 9 778
[36]	Li Z, Tian J W and Wei E B 2007 Acta Phys. Sin. 56 3028 (in Chinese)
[37]	Awan S A and Gould R D 2003 Thin Solid Films 423 267
[38]	Gould R D and Awan S A 2004 Thin Solid Films 469 184
[39]	Ozaki T, Ogasawara T, Kosugi T and Kamada T 1999 Physica B 263 333
[40]	Prabakar K, Narayandass S K and Mangalaraj D 2003 Phys. Stat. Sol. 199 507
[41]	Song X, Fu R and He H 2009 Microelectron. Eng. 86 2217
[42]	Chaabane I, Hlel F and Guidara K 2007 J. Alloy. Compd. 461 495
[43]	Lee W K, Liu J F and Nowick A S 1991 Phys. Rev. Lett. 67 1559

Electrical and dielectric properties of Al/p-Si and Al/perylene/p-Si type diodes in a wide frequency range

Electrical and dielectric properties of Al/p-Si and Al/perylene/p-Si type diodes in a wide frequency range

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