A snapback suppressed reverse-conducting IGBT with uniform temperature distribution

doi:10.1088/1674-1056/23/1/018505

Chin. Phys. B ›› 2014, Vol. 23 ›› Issue (1): 18505-018505.doi: 10.1088/1674-1056/23/1/018505

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

A snapback suppressed reverse-conducting IGBT with uniform temperature distribution

陈伟中, 李泽宏, 张波, 任敏, 张金平, 刘永, 李肇基

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu 610054, China

收稿日期:2013-04-07 修回日期:2013-06-08 出版日期:2013-11-12 发布日期:2013-11-12
基金资助:
Project supported by the National Science and Technology Major Project, China (Grant No. 2011ZX02504-003), the National Natural Science Foundation of China (Grant No. 61076082), and the Fundamental Research Funds for the Central Universities, China (Grant No. ZYGX2011J024).

A snapback suppressed reverse-conducting IGBT with uniform temperature distribution

Chen Wei-Zhong (陈伟中), Li Ze-Hong (李泽宏), Zhang Bo (张波), Ren Min (任敏), Zhang Jin-Ping (张金平), Liu Yong (刘永), Li Zhao-Ji (李肇基)

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu 610054, China

Received:2013-04-07 Revised:2013-06-08 Online:2013-11-12 Published:2013-11-12
Contact: Chen Wei-Zhong E-mail:cwz@cqu.edu.cn
Supported by:
Project supported by the National Science and Technology Major Project, China (Grant No. 2011ZX02504-003), the National Natural Science Foundation of China (Grant No. 61076082), and the Fundamental Research Funds for the Central Universities, China (Grant No. ZYGX2011J024).

摘要/Abstract

摘要： A novel reverse-conducting insulated-gate bipolar transistor (RC-IGBT) featuring a floating P-plug is proposed. The P-plug is embedded in the n-buffer layer to obstruct the electron current from flowing directly to the n-collector, which achieves the hole emission from the p-collector at a small collector size and suppresses the snapback effectively. Moreover, the current is uniformly distributed in the whole wafer at both IGBT mode and diode mode, which ensures the high temperature reliability of the RC-IGBT. Additionally, the P-plug acts as the base of the N-buffer/P-float/N-buffer transistor, which can be activated to extract the excessive carriers at the turn-off process. As the the simulation results show, for the proposed RC-IGBT, it achieves almost snapback-free output characteristics with a uniform current density and a uniform temperature distribution, which can greatly increase the reliability of the device.

关键词: reverse-conducting insulated-gate bipolar transistor, snapback, temperature reliability

Abstract: A novel reverse-conducting insulated-gate bipolar transistor (RC-IGBT) featuring a floating P-plug is proposed. The P-plug is embedded in the n-buffer layer to obstruct the electron current from flowing directly to the n-collector, which achieves the hole emission from the p-collector at a small collector size and suppresses the snapback effectively. Moreover, the current is uniformly distributed in the whole wafer at both IGBT mode and diode mode, which ensures the high temperature reliability of the RC-IGBT. Additionally, the P-plug acts as the base of the N-buffer/P-float/N-buffer transistor, which can be activated to extract the excessive carriers at the turn-off process. As the the simulation results show, for the proposed RC-IGBT, it achieves almost snapback-free output characteristics with a uniform current density and a uniform temperature distribution, which can greatly increase the reliability of the device.

Key words: reverse-conducting insulated-gate bipolar transistor, snapback, temperature reliability

中图分类号: (Semiconductor-device characterization, design, and modeling)

85.30.De

85.30.Pq (Bipolar transistors) 85.30.Tv (Field effect devices)

陈伟中, 李泽宏, 张波, 任敏, 张金平, 刘永, 李肇基. A snapback suppressed reverse-conducting IGBT with uniform temperature distribution[J]. Chin. Phys. B, 2014, 23(1): 18505-018505.

Chen Wei-Zhong (陈伟中), Li Ze-Hong (李泽宏), Zhang Bo (张波), Ren Min (任敏), Zhang Jin-Ping (张金平), Liu Yong (刘永), Li Zhao-Ji (李肇基). A snapback suppressed reverse-conducting IGBT with uniform temperature distribution[J]. Chin. Phys. B, 2014, 23(1): 18505-018505.

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A snapback suppressed reverse-conducting IGBT with uniform temperature distribution

A snapback suppressed reverse-conducting IGBT with uniform temperature distribution

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