Chin. Phys. B ›› 2013, Vol. 22 ›› Issue (12): 127305-127305.doi: 10.1088/1674-1056/22/12/127305

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Dependence of electron dynamics on magnetic fields in semiconductor superlattices

杨癸a, 王磊b, 田俊龙a   

  1. a College of Physics & Electrical Engineering, Anyang Normal University, Anyang 455000, China;
    b School of Mathematics and Physics, Anyang Institute of Technology, Anyang 455000, China
  • 收稿日期:2013-01-26 修回日期:2013-04-18 出版日期:2013-10-25 发布日期:2013-10-25
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 11047108, 11005003, U1204115, and 11005002), the Fund from the Science and Technology Department of Hennan Provice, China (Grant No. 112300410183), and the Science Foundation from the Education Department of Henan Province, China (Grant No. 2011B140002).

Dependence of electron dynamics on magnetic fields in semiconductor superlattices

Yang Gui (杨癸)a, Wang Lei (王磊)b, Tian Jun-Long (田俊龙)a   

  1. a College of Physics & Electrical Engineering, Anyang Normal University, Anyang 455000, China;
    b School of Mathematics and Physics, Anyang Institute of Technology, Anyang 455000, China
  • Received:2013-01-26 Revised:2013-04-18 Online:2013-10-25 Published:2013-10-25
  • Contact: Yang Gui E-mail:kuiziyang@126.com
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 11047108, 11005003, U1204115, and 11005002), the Fund from the Science and Technology Department of Hennan Provice, China (Grant No. 112300410183), and the Science Foundation from the Education Department of Henan Province, China (Grant No. 2011B140002).

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摘要： Numerical simulation results are presented for a drift-diffusion rate equation model which describes electronic transport due to sequential tunneling between adjacent quantum wells in weakly coupled semiconductor superlattices (SLs). The electron dynamics is dependent on the external magnetic field perpendicular to the electron motion direction, and a detailed explanation is given. Using different parameters, the system shows different dynamic behaviors, and three distinct phenomena are observed and controlled by increasing magnetic field. (i) For a lower doping density, the system state transfers from stable state to oscillationary state. (ii) An opposite result is obtained to that in the case (i) for an intermediate value of the doping density, and the state changes from oscillationary to stationary. (iii) The state varies between oscillationary and stationary when doping density is large. Then, a detailed theoretical analysis is given to explain these surprise phenomena. The distribution of the electric-field domain along the SLs is plotted. We find the structure of the domain is almost uniform for a lower doping density, and no domain occurs in the SLs. By adding an external ac signal, complex nonlinear behaviors are observed from the Poincaré map and the corresponding phase diagrams when the driving frequency changes.

关键词: superlattices, current oscillation, electric-field domain

Abstract: Numerical simulation results are presented for a drift-diffusion rate equation model which describes electronic transport due to sequential tunneling between adjacent quantum wells in weakly coupled semiconductor superlattices (SLs). The electron dynamics is dependent on the external magnetic field perpendicular to the electron motion direction, and a detailed explanation is given. Using different parameters, the system shows different dynamic behaviors, and three distinct phenomena are observed and controlled by increasing magnetic field. (i) For a lower doping density, the system state transfers from stable state to oscillationary state. (ii) An opposite result is obtained to that in the case (i) for an intermediate value of the doping density, and the state changes from oscillationary to stationary. (iii) The state varies between oscillationary and stationary when doping density is large. Then, a detailed theoretical analysis is given to explain these surprise phenomena. The distribution of the electric-field domain along the SLs is plotted. We find the structure of the domain is almost uniform for a lower doping density, and no domain occurs in the SLs. By adding an external ac signal, complex nonlinear behaviors are observed from the Poincaré map and the corresponding phase diagrams when the driving frequency changes.

Key words: superlattices, current oscillation, electric-field domain

中图分类号:  (High-field and nonlinear effects)

  • 73.50.Fq
72.20.Ht (High-field and nonlinear effects) 05.45.-a (Nonlinear dynamics and chaos)