Advantages of InGaN/GaN multiple quantum well solar cells with stepped-thickness quantum wells
陈鑫, 赵璧君, 任志伟, 童金辉, 王幸福, 卓祥景, 章俊, 李丹伟, 易翰翔, 李述体
Advantages of InGaN/GaN multiple quantum well solar cells with stepped-thickness quantum wells
Chen Xin (陈鑫), Zhao Bi-Jun (赵璧君), Ren Zhi-Wei (任志伟), Tong Jin-Hui (童金辉), Wang Xing-Fu (王幸福), Zhuo Xiang-Jing (卓祥景), Zhang Jun (章俊), Li Dan-Wei (李丹伟), Yi Han-Xiang (易翰翔), Li Shu-Ti (李述体)
中国物理B
.
2013, (7): 78402
-078402
.
DOI: 10.1088/1674-1056/22/7/078402