中国物理B ›› 2013, Vol. 22 ›› Issue (6): 64217-064217.doi: 10.1088/1674-1056/22/6/064217
• ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS • 上一篇 下一篇
赵斌, 赵明涛, 张艳飞, 杨俊和
Zhao Bin (赵斌), Zhao Ming-Tao (赵明涛), Zhang Yan-Fei (张艳飞), Yang Jun-He (杨俊和)
摘要: The deposition of a Cu seed layer film is investigated by supercritical fluid deposition (SCFD) using H2 as a reducing agent for Bis(2,2,6,6-tetramethyl-3,5- heptanedionato) copper in supercritical CO2 (scCO2). The effects of deposition temperature, precursor, and H2 concentration are investigated to optimize Cu deposition. Continuous metallic Cu films are deposited on Ru substrates at 190 ℃ when a 0.002 mol/L Cu precursor is introduced with 0.75 mol/L H2. A Cu precursor concentration higher than 0.002 mol/L is found to have negative effects on the surface qualities of Cu films. For a H2 concentration above 0.56 mol/L, the root-mean-square (RMS) roughness of a Cu film decreases as the H2 concentration increases. Finally, a 20-nm thick Cu film with a smooth surface, which is required as a seed layer in advanced interconnects, is successfully deposited at a high H2 concentration (0.75 mol/L).
中图分类号: (Interconnects, including holographic interconnects)