中国物理B ›› 2013, Vol. 22 ›› Issue (6): 64217-064217.doi: 10.1088/1674-1056/22/6/064217

• ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS • 上一篇    下一篇

Deposition of Cu seed layer film by supercritical fluid deposition for advanced interconnects

赵斌, 赵明涛, 张艳飞, 杨俊和   

  1. School of Materials Science and Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China
  • 收稿日期:2012-09-03 修回日期:2012-10-10 出版日期:2013-05-01 发布日期:2013-05-01
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 50901086 and 51072118), the Shanghai Shuguang Project, China (Grant No. 09SG46), the Science Foundation for the Excellent Youth Scholars of Shanghai Municipal Education Commission, China (Grant No. slg10032), the Qianjiang Project of Zhejiang Province, China (Grant No. 2010R10047), and the Scientific Research Foundation for the Returned Overseas Chinese Scholars, State Education Ministry.

Deposition of Cu seed layer film by supercritical fluid deposition for advanced interconnects

Zhao Bin (赵斌), Zhao Ming-Tao (赵明涛), Zhang Yan-Fei (张艳飞), Yang Jun-He (杨俊和)   

  1. School of Materials Science and Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China
  • Received:2012-09-03 Revised:2012-10-10 Online:2013-05-01 Published:2013-05-01
  • Contact: Zhao Bin, Yang Jun-He E-mail:zhaobin@usst.edu.cn; jhyang@usst.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 50901086 and 51072118), the Shanghai Shuguang Project, China (Grant No. 09SG46), the Science Foundation for the Excellent Youth Scholars of Shanghai Municipal Education Commission, China (Grant No. slg10032), the Qianjiang Project of Zhejiang Province, China (Grant No. 2010R10047), and the Scientific Research Foundation for the Returned Overseas Chinese Scholars, State Education Ministry.

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摘要： The deposition of a Cu seed layer film is investigated by supercritical fluid deposition (SCFD) using H2 as a reducing agent for Bis(2,2,6,6-tetramethyl-3,5- heptanedionato) copper in supercritical CO2 (scCO2). The effects of deposition temperature, precursor, and H2 concentration are investigated to optimize Cu deposition. Continuous metallic Cu films are deposited on Ru substrates at 190 ℃ when a 0.002 mol/L Cu precursor is introduced with 0.75 mol/L H2. A Cu precursor concentration higher than 0.002 mol/L is found to have negative effects on the surface qualities of Cu films. For a H2 concentration above 0.56 mol/L, the root-mean-square (RMS) roughness of a Cu film decreases as the H2 concentration increases. Finally, a 20-nm thick Cu film with a smooth surface, which is required as a seed layer in advanced interconnects, is successfully deposited at a high H2 concentration (0.75 mol/L).

关键词: supercritical CO2, Cu film, seed layer, Cu interconnects

Abstract: The deposition of a Cu seed layer film is investigated by supercritical fluid deposition (SCFD) using H2 as a reducing agent for Bis(2,2,6,6-tetramethyl-3,5- heptanedionato) copper in supercritical CO2 (scCO2). The effects of deposition temperature, precursor, and H2 concentration are investigated to optimize Cu deposition. Continuous metallic Cu films are deposited on Ru substrates at 190 ℃ when a 0.002 mol/L Cu precursor is introduced with 0.75 mol/L H2. A Cu precursor concentration higher than 0.002 mol/L is found to have negative effects on the surface qualities of Cu films. For a H2 concentration above 0.56 mol/L, the root-mean-square (RMS) roughness of a Cu film decreases as the H2 concentration increases. Finally, a 20-nm thick Cu film with a smooth surface, which is required as a seed layer in advanced interconnects, is successfully deposited at a high H2 concentration (0.75 mol/L).

Key words: supercritical CO2, Cu film, seed layer, Cu interconnects

中图分类号:  (Interconnects, including holographic interconnects)

  • 42.82.Ds
68.35.bd (Metals and alloys) 68.55.A- (Nucleation and growth)