中国物理B ›› 2013, Vol. 22 ›› Issue (6): 64207-064207.doi: 10.1088/1674-1056/22/6/064207
• ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS • 上一篇 下一篇
黄伟其, 苗信建, 黄忠梅, 陈汉琼, 苏琴
Huang Wei-Qi (黄伟其), Miao Xing-Jian (苗信建), Huang Zhong-Mei (黄忠梅), Cheng Han-Qiong (陈汉琼), Shu Qin (苏琴)
摘要: A curviform surface breaks the symmetrical shape of silicon quantum dots on which some bonds can produce localized electronic states in the bandgap. The calculation results show that the bonding energy and electronic states of silicon quantum dots are different on various curved surfaces, for example, a Si-O-Si bridge bond on curved surface provides localized levels in bandgap and its bonding energy is shallower than that on the facet. The red-shifting ofthe photoluminescence spectrum on smaller silicon quantum dots can be explained by the curved surface effect. Experiments demonstrate that silicon quantum dots are activated for emission due to the localized levels provided by the curved surface effect.
中图分类号: (Lasers)