Chin. Phys. B ›› 2013, Vol. 22 ›› Issue (1): 18501-018501.doi: 10.1088/1674-1056/22/1/018501
• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇 下一篇
金林a b, 张满红a, 霍宗亮a, 王永a, 余兆安a, 姜丹丹a b, 陈军宁b, 刘明a
Jin Lin (金林)a b, Zhang Man-Hong (张满红)a, Huo Zong-Liang (霍宗亮)a, Wang Yong (王永)a, Yu Zhao-An (余兆安)a, Jiang Dan-Dan (姜丹丹)a b, Chen Jun-Ning (陈军宁)b, Liu Ming (刘明)a
摘要: With the merits of simple process and short fabrication period, the capacitor structure provides a convenient way to evaluate memory characteristics of charge trap memory devices. However, the slow minority carrier generation in a capacitor often makes an underestimation of the program/erase speed. In this paper, illumination around a memory capacitor is proposed to enhance the generation of minority carriers so that an accurate measurement of the program/erase speed can be achieved. From the dependence of the inversion capacitance on frequency, a time constant is extracted to quantitatively characterize the formation of the inversion layer. Experimental results show that under a high enough illumination, this time constant is greatly reduced and the measured minority carrier related program/erase speed is in agreement with the reported value in a transistor structure.
中图分类号: (Semiconductor devices)