Chin. Phys. B ›› 2012, Vol. 21 ›› Issue (12): 128101-128101.doi: 10.1088/1674-1056/21/12/128101

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

The influence of SixNy interlayer on GaN film grown on Si(111) substrate

彭冬生, 陈志刚, 谭聪聪   

  1. Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, China
  • 收稿日期:2012-04-01 修回日期:2012-05-08 出版日期:2012-11-01 发布日期:2012-11-01
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 60806017), the Science and Technology Program of Shenzhen, China (Grant No. JC201005280455A ), the Shenzhen University Research and Development Program, China (Grant No. 201128), and the Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, China (Grant No. 201208).

The influence of SixNy interlayer on GaN film grown on Si(111) substrate

Peng Dong-Sheng (彭冬生), Chen Zhi-Gang (陈志刚), Tan Cong-Cong (谭聪聪)   

  1. Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, China
  • Received:2012-04-01 Revised:2012-05-08 Online:2012-11-01 Published:2012-11-01
  • Contact: Peng Dong-Sheng E-mail:pengdongsheng@163.com
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 60806017), the Science and Technology Program of Shenzhen, China (Grant No. JC201005280455A ), the Shenzhen University Research and Development Program, China (Grant No. 201128), and the Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, China (Grant No. 201208).

摘要: A method to drastically reduce dislocation density in a GaN film grown on an Si(111) substrate is newly developed. In this method, the SixNy interlayer which is deposited on an AlN buffer layer in situ is introduced to grow the GaN film laterally. The crack-free GaN film with thickness over 1.7 micron is grown on an Si(111) substrate successfully. Synthesized GaN epilayer is characterized by X-ray diffraction (XRD), atomic force microscope (AFM), and Raman spectrum. The test results show that the GaN crystal reveals a wurtzite structure with the <0001> crystal orientation and the full width at half maximum of the X-ray diffraction curve in the (0002) plane is as low as 403 arcsec for the GaN film grown on the Si substrate with an SixNy interlayer. In addition, Raman scattering is used to study the stress in the sample. The results indicate that the SixNy interlayer can more effectively accommodate the strain energy. So the dislocation density can be reduced drastically, and the crystal quality of GaN film can be greatly improved by introducing SixNy interlayer.

关键词: SixNy interlayer, silicon substrate, GaN film, Raman scattering

Abstract: A method to drastically reduce dislocation density in a GaN film grown on an Si(111) substrate is newly developed. In this method, the SixNy interlayer which is deposited on an AlN buffer layer in situ is introduced to grow the GaN film laterally. The crack-free GaN film with thickness over 1.7 micron is grown on an Si(111) substrate successfully. Synthesized GaN epilayer is characterized by X-ray diffraction (XRD), atomic force microscope (AFM), and Raman spectrum. The test results show that the GaN crystal reveals a wurtzite structure with the <0001> crystal orientation and the full width at half maximum of the X-ray diffraction curve in the (0002) plane is as low as 403 arcsec for the GaN film grown on the Si substrate with an SixNy interlayer. In addition, Raman scattering is used to study the stress in the sample. The results indicate that the SixNy interlayer can more effectively accommodate the strain energy. So the dislocation density can be reduced drastically, and the crystal quality of GaN film can be greatly improved by introducing SixNy interlayer.

Key words: SixNy interlayer, silicon substrate, GaN film, Raman scattering

中图分类号:  (III-V semiconductors)

  • 81.05.Ea
81.15.Kk (Vapor phase epitaxy; growth from vapor phase) 61.72.-y (Defects and impurities in crystals; microstructure)