中国物理B ›› 2012, Vol. 21 ›› Issue (11): 117305-117305.doi: 10.1088/1674-1056/21/11/117305

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Broadband light-emitting from multilayer-stacked InAs/GaAs quantum dots

刘宁a b, 金鹏a, 王占国a   

  1. a Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    b Electricity Examination Department, Patent Examination Cooperation Center of the Patent Office, State Intellectual Property Office, Beijing 100190, China
  • 收稿日期:2012-06-05 修回日期:2012-07-19 出版日期:2012-10-01 发布日期:2012-10-01
  • 基金资助:
    Project supported by the National Basic Research Program of China (Grant No. 2006CB604904) and the National Natural Science Foundation of China (Grant Nos. 60976057, 60876086, and 60776037).

Broadband light-emitting from multilayer-stacked InAs/GaAs quantum dots

Liu Ning (刘宁)a b, Jin Peng (金鹏)a, Wang Zhan-Guoa   

  1. a Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    b Electricity Examination Department, Patent Examination Cooperation Center of the Patent Office, State Intellectual Property Office, Beijing 100190, China
  • Received:2012-06-05 Revised:2012-07-19 Online:2012-10-01 Published:2012-10-01
  • Contact: Jin Peng E-mail:pengjin@semi.ac.cn
  • Supported by:
    Project supported by the National Basic Research Program of China (Grant No. 2006CB604904) and the National Natural Science Foundation of China (Grant Nos. 60976057, 60876086, and 60776037).

摘要: We report the effect of the GaAs spacer layer thickness on the photoluminescence (PL) spectral bandwidth of InAs/GaAs self-assembled quantum dots (QDs). A PL spectral bandwidth of 158 nm is achieved with a five-layer stack of InAs QDs which has a 11-nm thick GaAs spacer layer. We investigate the optical and the structural properties of the multilayer-stacked InAs/GaAs QDs with different GaAs spacer layer thicknesses. The results show that the spacer thickness is a key parameter affecting the multi-stacked InAs/GaAs QDs for wide-spectrum emission.

关键词: quantum dots, broadband spectrum, superluminescent diode

Abstract: We report the effect of the GaAs spacer layer thickness on the photoluminescence (PL) spectral bandwidth of InAs/GaAs self-assembled quantum dots (QDs). A PL spectral bandwidth of 158 nm is achieved with a five-layer stack of InAs QDs which has a 11-nm thick GaAs spacer layer. We investigate the optical and the structural properties of the multilayer-stacked InAs/GaAs QDs with different GaAs spacer layer thicknesses. The results show that the spacer thickness is a key parameter affecting the multi-stacked InAs/GaAs QDs for wide-spectrum emission.

Key words: quantum dots, broadband spectrum, superluminescent diode

中图分类号:  (Quantum dots)

  • 73.21.La
78.67.Hc (Quantum dots) 85.60.Jb (Light-emitting devices)