The properties of GaMnN lms grown by metalorganic chemical vapour deposition using Raman spectroscopy

doi:10.1088/1674-1056/21/7/077801

中国物理B ›› 2012, Vol. 21 ›› Issue (7): 77801-077801.doi: 10.1088/1674-1056/21/7/077801

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

The properties of GaMnN lms grown by metalorganic chemical vapour deposition using Raman spectroscopy

邢海英^{a b}, 牛萍娟^{b c}, 谢玉芯^a

a School of Electronics and Information Engineering Tianjin Polytechnic University, Tianjin 300387, China;
b Engineering Research Center of High Power Solid State Lighting Application System, Tianjin 300387, China;
c School of Electrical Engineering & Automation Tianjin Polytechnic University, Tianjin 300387, China

收稿日期:2011-11-13 修回日期:2012-01-01 出版日期:2012-06-01 发布日期:2012-06-01
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 50602018), the Natural Science Foundation of Guangdong Province, China (Grant No. 06025083), the Research Project of Science and Technology of Guangdong Province, China (Grant No. 2006A10802001), the Key Research Project of Science and Technology of Guangzhou, China (Grant No. 2005Z1-D0071), and the Crucial Field and Key Breakthrough Project of Guangdong Province and Hongkong, China (Grant No. 207A010501008).

The properties of GaMnN lms grown by metalorganic chemical vapour deposition using Raman spectroscopy

Xing Hai-Ying(邢海英)^a)b), Niu Ping-Juan(牛萍娟)^b)c)†, and Xie Yu-Xin(谢玉芯)^a)

a School of Electronics and Information Engineering Tianjin Polytechnic University, Tianjin 300387, China;
b Engineering Research Center of High Power Solid State Lighting Application System, Tianjin 300387, China;
c School of Electrical Engineering & Automation Tianjin Polytechnic University, Tianjin 300387, China

Received:2011-11-13 Revised:2012-01-01 Online:2012-06-01 Published:2012-06-01
Contact: Niu Ping-Juan E-mail:pjniu@hotmail.com
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 50602018), the Natural Science Foundation of Guangdong Province, China (Grant No. 06025083), the Research Project of Science and Technology of Guangdong Province, China (Grant No. 2006A10802001), the Key Research Project of Science and Technology of Guangzhou, China (Grant No. 2005Z1-D0071), and the Crucial Field and Key Breakthrough Project of Guangdong Province and Hongkong, China (Grant No. 207A010501008).

摘要/Abstract

摘要： An investigation of room-temperature Raman scattering is carried out on ferromagnetic semiconductor GaMnN films grown by metalorganic chemical vapour deposition with different Mn content values. New bands around 300 and 669 cm^-1, that are not observed in undoped GaN, are found. They are assigned to disorder-activated mode and local vibration mode (LVM), respectively. After annealing, the intensity ratio between the LVM and E₂(high) mode, i.e., I_LVM=I_E₂(high), increases. The LO phonon-plasmon coupled (LOPC) mode is found in GaMnN, and the frequency of the LOPC mode of GaMnN shifting toward higher side is observed with the increase in the Mn doping in GaN. The ferromagnetic character and the carrier density of our GaMnN sample are discussed.

关键词: diluted magnetic semiconductor, metalorganic chemical vapour deposition, Raman scattering

Abstract: An investigation of room-temperature Raman scattering is carried out on ferromagnetic semiconductor GaMnN films grown by metalorganic chemical vapour deposition with different Mn content values. New bands around 300 and 669 cm^-1, that are not observed in undoped GaN, are found. They are assigned to disorder-activated mode and local vibration mode (LVM), respectively. After annealing, the intensity ratio between the LVM and E₂(high) mode, i.e., I_LVM=I_E₂(high), increases. The LO phonon-plasmon coupled (LOPC) mode is found in GaMnN, and the frequency of the LOPC mode of GaMnN shifting toward higher side is observed with the increase in the Mn doping in GaN. The ferromagnetic character and the carrier density of our GaMnN sample are discussed.

Key words: diluted magnetic semiconductor, metalorganic chemical vapour deposition, Raman scattering

中图分类号: (Infrared and Raman spectra)

78.30.-j

78.30.Fs (III-V and II-VI semiconductors)

邢海英, 牛萍娟, 谢玉芯 . The properties of GaMnN lms grown by metalorganic chemical vapour deposition using Raman spectroscopy[J]. 中国物理B, 2012, 21(7): 77801-077801.

Xing Hai-Ying(邢海英), Niu Ping-Juan(牛萍娟), and Xie Yu-Xin(谢玉芯) . The properties of GaMnN lms grown by metalorganic chemical vapour deposition using Raman spectroscopy[J]. Chin. Phys. B, 2012, 21(7): 77801-077801.

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The properties of GaMnN lms grown by metalorganic chemical vapour deposition using Raman spectroscopy

The properties of GaMnN lms grown by metalorganic chemical vapour deposition using Raman spectroscopy

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