Impact of back-gate bias on the hysteresis effect in partially depleted SOI MOSFETs

doi:10.1088/1674-1056/21/5/056602

中国物理B ›› 2012, Vol. 21 ›› Issue (5): 56602-056602.doi: 10.1088/1674-1056/21/5/056602

Impact of back-gate bias on the hysteresis effect in partially depleted SOI MOSFETs

罗杰馨¹ ²,陈静¹,周建华¹ ²,伍青青¹ ²,柴展¹,余涛¹ ³,王曦¹

1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Shanghai 200050, China;
2. Graduate University of Chinese Academy of Sciences, Beijing 100049, China;
3. The Key Laboratory of Thin Films of Jiangsu, Departments of Physics, Soochow University, Suzhou 215006, China

修回日期:2012-04-27 出版日期:2012-04-01 发布日期:2012-04-01
基金资助:
Project supported by the TCAD Simulation and SPICE Modeling of 0.13μm SOI Technology, China (Grant No. 2009ZX02306-002).

Impact of back-gate bias on the hysteresis effect in partially depleted SOI MOSFETs

Luo Jie-Xin(罗杰馨)^a)b), Chen Jing(陈静)^a)†, Zhou Jian-Hua(周建华)^a)b), Wu Qing-Qing(伍青青)^a)b), Chai Zhan(柴展)^a), Yu Tao(余涛)^a)c), and Wang Xi(王曦)^a)

a. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Shanghai 200050, China;
b. Graduate University of Chinese Academy of Sciences, Beijing 100049, China;
c. The Key Laboratory of Thin Films of Jiangsu, Departments of Physics, Soochow University, Suzhou 215006, China

Revised:2012-04-27 Online:2012-04-01 Published:2012-04-01
Supported by:
Project supported by the TCAD Simulation and SPICE Modeling of 0.13μm SOI Technology, China (Grant No. 2009ZX02306-002).

摘要/Abstract

摘要： The hysteresis effect in the output characteristics, originating from the floating body effect, has been measured in partially depleted (PD) silicon-on-insulator (SOI) MOSFETs at different back-gate biases. I_D hysteresis has been developed to clarify the hysteresis characteristics. The fabricated devices show the positive and negative peaks in the I_D hysteresis. The experimental results show that the I_D hysteresis is sensitive to the back gate bias in 0.13-μm PD SOI MOSFETs and does not vary monotonously with the back-gate bias. Based on the steady-state Shockley--Read--Hall (SRH) recombination theory, we have successfully interpreted the impact of the back-gate bias on the hysteresis effect in PD SOI MOSFETs.

关键词: floating body effect, hysteresis effect, back gate bias, partially depleted (PD) SOI

Abstract: The hysteresis effect in the output characteristics, originating from the floating body effect, has been measured in partially depleted (PD) silicon-on-insulator (SOI) MOSFETs at different back-gate biases. I_D hysteresis has been developed to clarify the hysteresis characteristics. The fabricated devices show the positive and negative peaks in the I_D hysteresis. The experimental results show that the I_D hysteresis is sensitive to the back gate bias in 0.13-μm PD SOI MOSFETs and does not vary monotonously with the back-gate bias. Based on the steady-state Shockley--Read--Hall (SRH) recombination theory, we have successfully interpreted the impact of the back-gate bias on the hysteresis effect in PD SOI MOSFETs.

Key words: floating body effect, hysteresis effect, back gate bias, partially depleted (PD) SOI

中图分类号: (Metals, alloys, and semiconductors)

66.70.Df

68.35.bg (Semiconductors) 73.20.-r (Electron states at surfaces and interfaces) 73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

罗杰馨, 陈静, 周建华, 伍青青, 柴展, 余涛, 王曦. Impact of back-gate bias on the hysteresis effect in partially depleted SOI MOSFETs[J]. 中国物理B, 2012, 21(5): 56602-056602.

Luo Jie-Xin(罗杰馨), Chen Jing(陈静), Zhou Jian-Hua(周建华), Wu Qing-Qing(伍青青), Chai Zhan(柴展), Yu Tao(余涛), and Wang Xi(王曦) . Impact of back-gate bias on the hysteresis effect in partially depleted SOI MOSFETs[J]. Chin. Phys. B, 2012, 21(5): 56602-056602.

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Impact of back-gate bias on the hysteresis effect in partially depleted SOI MOSFETs

Impact of back-gate bias on the hysteresis effect in partially depleted SOI MOSFETs

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