Impact of back-gate bias on the hysteresis effect in partially depleted SOI MOSFETs
罗杰馨, 陈静, 周建华, 伍青青, 柴展, 余涛, 王曦
Impact of back-gate bias on the hysteresis effect in partially depleted SOI MOSFETs
Luo Jie-Xin(罗杰馨), Chen Jing(陈静), Zhou Jian-Hua(周建华), Wu Qing-Qing(伍青青), Chai Zhan(柴展), Yu Tao(余涛), and Wang Xi(王曦)
中国物理B
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2012, (5): 56602
-056602
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DOI: 10.1088/1674-1056/21/5/056602