The influences of model parameters on the characteristics of memristors

doi:10.1088/1674-1056/21/4/048401

中国物理B ›› 2012, Vol. 21 ›› Issue (4): 48401-048401.doi: 10.1088/1674-1056/21/4/048401

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

周静,黄达

收稿日期:2011-07-24 修回日期:2011-09-30 出版日期:2012-02-29 发布日期:2012-02-29
通讯作者: 周静,jingzhou0210@126.com E-mail:jingzhou0210@126.com

The influences of model parameters on the characteristics of memristors

Zhou Jing(周静)^† and Huang Da(黄达)

National Laboratory for Parallel and Distributed Processing, School of Computer, National University of Defense Technology, Changsha 410073, China

Received:2011-07-24 Revised:2011-09-30 Online:2012-02-29 Published:2012-02-29
Contact: Zhou Jing,jingzhou0210@126.com E-mail:jingzhou0210@126.com
Supported by:
Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 61003082) and the Science Fund for Creative Research Groups of the National Natural Science Foundation of China (Grant No. 60921062).

摘要/Abstract

Abstract: As the fourth passive circuit component, a memristor is a nonlinear resistor that can “remember” the amount of charge passing through it. The characteristic of “remembering” the charge and non-volatility makes memristors great potential candidates in many fields. Nowadays, only a few groups have the ability to fabricate memristors, and most researchers study them by theoretic analysis and simulation. In this paper, we first analyse the theoretical base and characteristics of memristors, then use a simulation program with integrated circuit emphasis as our tool to simulate the theoretical model of memristors and change the parameters in the model to see the influence of each parameter on the characteristics. Our work supplies researchers engaged in memristor-based circuits with advice on how to choose the proper parameters.

Key words: memristor, I-V characteristics, simulation program with integrated circuit emphasis

中图分类号: (Passive circuit components)

84.32.-y

89.20.Ff (Computer science and technology) 84.37.+q (Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.))

周静,黄达. [J]. 中国物理B, 2012, 21(4): 48401-048401.

Zhou Jing(周静) and Huang Da(黄达) . The influences of model parameters on the characteristics of memristors[J]. Chin. Phys. B, 2012, 21(4): 48401-048401.

参考文献 16

[1]	Song T Q and Gao S J http://book.51cto.com/art/201103/246990.htm (in Chinese) [2011-07-20]
[2]	Chua L O 1971 IEEE Trans. Circ. Theor. 18 507
[3]	Strukov D B, Snider G S, Stewart D R and Williams R S 2008 Nature 453 80
[4]	Biolek Z, Biolek D and Biolkova V 2009 Radioengineering 18 210
[5]	Benderli S and Wey T A 2009 Electron. Lett. 45 377
[6]	Batas D and Fiedler H 2011 IEEE Trans. Nanotechnol. 10 250
[7]	Zhang X, Zhou Y Z, Bi Q, Yang X H and Zu Y X 2010 Acta Phys. Sin. 59 6673 (in Chinese)
[8]	Pershin Y V, La Fontaine S and Ventra M D 2009 Phys. Rev. E 80 021926
[9]	Bao B C, Liu Z and Xu J P 2010 Acta Phys. Sin. 59 3785 (in Chinese)
[10]	Jo S H, Chang T, Ebong I, Bhadviya B B, Mazumder P and Lu W 2010 Nano Lett. 10 1297
[11]	Vontobel P O, Robinett W, Kuekes P J, Stewart D R, Straznechy J and Williams R S 2009 Nanotechnology 20 425204
[12]	Yang J J, Pickett M D, Li X, Ohlberg D A A, Stewart D R and Williams R S 2008 Nature Nanotechnology 3 429
[13]	Lehtonen E and Laiho M 2010 Proceedings of the 12th International Workshop on Cellular Nanoscale Networks and Their Applications February 3-5, 2010 Berkeley, California p. 1
[14]	Nagel L W 1975 SPICE2, A Computer Program to Simulate Semiconductor Circuits: User's Guide for Spice & Abridgement of Memorandum (California: University of California, Electronics Research Laboratory) pp. 1-9
[15]	Barker D 1991 MINNIE and HSPICE for Analogue Circuit Simulation (Boston/Dordrecht/London: Kluwer Academic Publishers) pp. 3-10
[16]	Synopsis Inc. 2004 HSPICE Manual 3rd edn. (California: Mountain View) pp. 2-20

The influences of model parameters on the characteristics of memristors

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