中国物理B ›› 2011, Vol. 20 ›› Issue (8): 87309-087309.doi: 10.1088/1674-1056/20/8/087309

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Open-circuit voltage analysis of p–i–n type amorphous silicon solar cells deposited at low temperature

倪牮, 张建军, 曹宇, 王先宝, 李超, 陈新亮, 耿新华, 赵颖   

  1. Institute of Photo-electronics Thin Film Devices and Technique of Nankai University, Key Laboratory of Photo-electronics Thin Film Devices and Technique of Tianjin, Key Laboratory of Photo-electronic Information Science and Technology of Ministry of Educ
  • 收稿日期:2011-01-26 修回日期:2011-02-28 出版日期:2011-08-15 发布日期:2011-08-15
  • 基金资助:
    Project supported by the National High Technology Research and Development Program of China (Grant No. 2009AA05Z422), the National Basic Research Program of China (Grant Nos. 2011CBA00705, 2011CBA00706, and 2011CBA00707), and the Natural Science Foundation of Tianjin (Grant No. 08JCZDJC22200).

Open-circuit voltage analysis of p–i–n type amorphous silicon solar cells deposited at low temperature

Ni Jian(倪牮), Zhang Jian-Jun(张建军)†, Cao Yu(曹宇), Wang Xian-Bao(王先宝), Li Chao(李超), Chen Xin-Liang(陈新亮), Geng Xin-Hua(耿新华), and Zhao Ying(赵颖)   

  1. Institute of Photo-electronics Thin Film Devices and Technique of Nankai University, Key Laboratory of Photo-electronics Thin Film Devices and Technique of Tianjin, Key Laboratory of Photo-electronic Information Science and Technology of Ministry of Education (Nankai University), Tianjin 300071, China
  • Received:2011-01-26 Revised:2011-02-28 Online:2011-08-15 Published:2011-08-15
  • Supported by:
    Project supported by the National High Technology Research and Development Program of China (Grant No. 2009AA05Z422), the National Basic Research Program of China (Grant Nos. 2011CBA00705, 2011CBA00706, and 2011CBA00707), and the Natural Science Foundation of Tianjin (Grant No. 08JCZDJC22200).

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摘要： This paper identifies the contributions of p—a—SiC:H layers and i—a—Si:H layers to the open circuit voltage of p—i—n type a—Si:H solar cells deposited at a low temperature of 125 °C. We find that poor quality p—a—SiC:H films under regular conditions lead to a restriction of open circuit voltage although the band gap of the i-layer varies widely. A significant improvement in open circuit voltage has been obtained by using high quality p—a—SiC:H films optimized at the “low-power regime” under low silane flow rates and high hydrogen dilution conditions.

关键词: amorphous silicon, solar cell, low temperature, open-circuit voltage

Abstract: This paper identifies the contributions of p–a–SiC:H layers and i–a–Si:H layers to the open circuit voltage of p–i–n type a–Si:H solar cells deposited at a low temperature of 125 ℃. We find that poor quality p–a–SiC:H films under regular conditions lead to a restriction of open circuit voltage although the band gap of the i-layer varies widely. A significant improvement in open circuit voltage has been obtained by using high quality p–a–SiC:H films optimized at the “low-power regime” under low silane flow rates and high hydrogen dilution conditions.

Key words: amorphous silicon, solar cell, low temperature, open-circuit voltage

中图分类号:  (Amorphous semiconductors; glasses)

  • 73.61.Jc
81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 88.40.jj (Silicon solar cells)