中国物理B ›› 2011, Vol. 20 ›› Issue (7): 74401-074401.doi: 10.1088/1674-1056/20/7/074401

• ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS • 上一篇    下一篇

Designing power heterojunction bipolar transistors with non-uniform emitter finger lengths to achieve high thermal stability

金冬月, 张万荣, 付强, 陈亮, 肖盈, 王任卿, 赵昕   

  1. College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
  • 收稿日期:2010-12-15 修回日期:2011-02-16 出版日期:2011-07-15 发布日期:2011-07-15

Designing power heterojunction bipolar transistors with non-uniform emitter finger lengths to achieve high thermal stability

Jin Dong-Yue(金冬月)†, Zhang Wan-Rong(张万荣), Fu Qiang(付强), Chen Liang(陈亮), Xiao Ying(肖盈), Wang Ren-Qing(王任卿), and Zhao Xin(赵昕)   

  1. College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
  • Received:2010-12-15 Revised:2011-02-16 Online:2011-07-15 Published:2011-07-15

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摘要： With the aid of a thermal-electrical model, a practical method for designing multi-finger power heterojunction bipolar transistors with finger lengths divided in groups is proposed. The method can effectively enhance the thermal stability of the devices without sacrificing the design time. Taking a 40-finger heterojunction bipolar transistor for example, the device with non-uniform emitter finger lengths is optimized and fabricated. Both the theoretical and the experimental results show that, for the optimum device, the peak temperature is lowered by 26.19 K and the maximum temperature difference is reduced by 56.67% when compared with the conventional heterojunction bipolar transistor with uniform emitter finger length. Furthermore, the ability to improve the uniformity of the temperature profile and to expand the thermal stable operation range is strengthened as the power level increases, which is ascribed to the improvement of the thermal resistance in the optimum device. A detailed design procedure is also summarized to provide a general guide for designing power heterojunction bipolar transistors with non-uniform finger lengths.

Abstract: With the aid of a thermal-electrical model, a practical method for designing multi-finger power heterojunction bipolar transistors with finger lengths divided in groups is proposed. The method can effectively enhance the thermal stability of the devices without sacrificing the design time. Taking a 40-finger heterojunction bipolar transistor for example, the device with non-uniform emitter finger lengths is optimized and fabricated. Both the theoretical and the experimental results show that, for the optimum device, the peak temperature is lowered by 26.19 K and the maximum temperature difference is reduced by 56.67% when compared with the conventional heterojunction bipolar transistor with uniform emitter finger length. Furthermore, the ability to improve the uniformity of the temperature profile and to expand the thermal stable operation range is strengthened as the power level increases, which is ascribed to the improvement of the thermal resistance in the optimum device. A detailed design procedure is also summarized to provide a general guide for designing power heterojunction bipolar transistors with non-uniform finger lengths.

Key words: heterojunction bipolar transistor, high power, thermal stability

中图分类号:  (Heat conduction)

  • 44.10.+i
73.40.Lq (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 91.60.Ki (Thermal properties)