Influence of Ga+ ion irradiation on thermal relaxation of exchange bias field in exchange-coupled CoFe/IrMn bilayers

doi:10.1088/1674-1056/20/5/057503

中国物理B ›› 2011, Vol. 20 ›› Issue (5): 57503-057503.doi: 10.1088/1674-1056/20/5/057503

Influence of Ga⁺ ion irradiation on thermal relaxation of exchange bias field in exchange-coupled CoFe/IrMn bilayers

祁先进¹, 王寅岗¹, 缪雪飞¹, 李子全¹, 黄一中²

(1)College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China; (2)Department of Materials, Oxford University, Oxford OX1 3PH, UK;School of Materials Science and Engineering, Nanyang Technological University, Singapore

收稿日期:2010-07-20 修回日期:2010-12-16 出版日期:2011-05-15 发布日期:2011-05-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 50671048).

Influence of Ga⁺ ion irradiation on thermal relaxation of exchange bias field in exchange-coupled CoFe/IrMn bilayers

Qi Xian-Jin(祁先进)^a), Wang Yin-Gang(王寅岗)^a)†, Miao Xue-Fei(缪雪飞)^a), Li Zi-Quan(李子全)^a), and Huang Yi-Zhong(黄一中)^b)c)

^a College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China; ^b Department of Materials, Oxford University, Oxford OX1 3PH, UK; ^cSchool of Materials Science and Engineering, Nanyang Technological University, Singapore

Received:2010-07-20 Revised:2010-12-16 Online:2011-05-15 Published:2011-05-15
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 50671048).

摘要/Abstract

摘要： This paper reports that the CoFe/IrMn bilayers are deposited by magnetron sputtering on the surfaces of thermally-oxidized Si substrates. It investigates the thermal relaxations of both non-irradiated and Ga⁺ ion irradiated CoFe/IrMn bilayers by means of holding the bilayers in a negative saturation field. The results show that exchange bias field decreases with the increase of holding time period for both non-irradiated and Ga⁺ ion irradiated CoFe/IrMn bilayers. Exchange bias field is also found to be smaller upon irradiation at higher ion dose. This reduction of exchange bias field is attributed to the change of energy barrier induced by ion-radiation.

关键词: thermal relaxation, exchange bias, ion irradiation, energy barrier

Abstract: This paper reports that the CoFe/IrMn bilayers are deposited by magnetron sputtering on the surfaces of thermally-oxidized Si substrates. It investigates the thermal relaxations of both non-irradiated and Ga⁺ ion irradiated CoFe/IrMn bilayers by means of holding the bilayers in a negative saturation field. The results show that exchange bias field decreases with the increase of holding time period for both non-irradiated and Ga⁺ ion irradiated CoFe/IrMn bilayers. Exchange bias field is also found to be smaller upon irradiation at higher ion dose. This reduction of exchange bias field is attributed to the change of energy barrier induced by ion-radiation.

Key words: thermal relaxation, exchange bias, ion irradiation, energy barrier

中图分类号: (Magnetic aftereffects)

75.60.Lr

75.60.Jk (Magnetization reversal mechanisms) 75.60.Ej (Magnetization curves, hysteresis, Barkhausen and related effects)

祁先进, 王寅岗, 缪雪飞, 李子全, 黄一中. Influence of Ga⁺ ion irradiation on thermal relaxation of exchange bias field in exchange-coupled CoFe/IrMn bilayers[J]. 中国物理B, 2011, 20(5): 57503-057503.

Qi Xian-Jin(祁先进), Wang Yin-Gang(王寅岗), Miao Xue-Fei(缪雪飞), Li Zi-Quan(李子全), and Huang Yi-Zhong(黄一中). Influence of Ga⁺ ion irradiation on thermal relaxation of exchange bias field in exchange-coupled CoFe/IrMn bilayers[J]. Chin. Phys. B, 2011, 20(5): 57503-057503.

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Influence of Ga⁺ ion irradiation on thermal relaxation of exchange bias field in exchange-coupled CoFe/IrMn bilayers

Influence of Ga⁺ ion irradiation on thermal relaxation of exchange bias field in exchange-coupled CoFe/IrMn bilayers

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